STMicroelectronics STD4NK80ZT4 N-Channel MOSFET 800V 3A DPAK

Revolutionizing Power Management: STMicroelectronics STD4NK80ZT4 N-Channel MOSFET

The STMicroelectronics STD4NK80ZT4 N-Channel MOSFET represents a breakthrough in power semiconductor technology, combining high-voltage capabilities with exceptional efficiency and reliability. Designed for demanding applications in industrial, automotive, and consumer electronics sectors, this SuperMESH™ series MOSFET delivers 800V drain-source voltage ratings while maintaining ultra-low on-resistance and superior thermal performance. Let’s explore how this surface-mount device redefines performance benchmarks in modern power systems.

Technical Excellence in Power Semiconductors

At the core of the STD4NK80ZT4’s performance lies its advanced MOSFET architecture, engineered to balance high-voltage operation with minimal conduction losses. With a 3.5Ω maximum Rds(on) at 1.5A and 10V gate-source voltage, this device achieves remarkable efficiency in switching applications. The 800V Vdss rating makes it ideal for high-voltage power supplies, motor drives, and industrial automation systems requiring robust electrical isolation and stability.

Key technical parameters highlight its versatility:

SuperMESH™ Technology Advantages

STMicroelectronics’ proprietary SuperMESH™ technology forms the foundation of this device’s superior performance. This advanced charge-balanced structure reduces specific on-resistance while maintaining exceptional avalanche energy strength. The result is enhanced switching speed with minimized electromagnetic interference (EMI), making the STD4NK80ZT4 particularly suitable for high-frequency power converters and energy-efficient lighting systems.

The device’s ±30V gate voltage rating provides enhanced protection against voltage spikes, while the 4.5V gate threshold voltage ensures compatibility with standard logic-level drivers. These characteristics enable seamless integration with microcontroller-based control systems in IoT devices and smart home applications.

DPAK Packaging for Thermal Efficiency

Housed in a space-saving DPAK (TO-252-3) package, this MOSFET combines surface-mount compatibility with excellent thermal dissipation. The package’s low thermal resistance (80W power dissipation at case temperature) enables reliable operation in compact designs where heat management is critical. Its 3-lead configuration with tab connection simplifies PCB layout while maintaining mechanical stability in vibration-prone environments.

This packaging solution particularly benefits:

• Power supplies for telecommunications equipment
• Home appliance motor controllers
• Industrial automation systems
• LED lighting ballasts

Application Versatility

The STD4NK80ZT4’s specifications make it a versatile component across multiple industries. In power supply designs, its 800V rating enables direct connection to rectified AC mains without additional voltage clamping circuits. The device’s low gate charge and fast switching characteristics improve efficiency in DC-DC converters used in renewable energy systems and battery-powered devices.

Automotive applications benefit from its rugged construction and wide operating temperature range, making it suitable for engine control units, electric vehicle charging circuits, and lighting systems. Consumer electronics manufacturers leverage its compact DPAK package to create slimmer designs while maintaining reliable power handling.

Reliability and Longevity

Engineered for harsh operating conditions, this MOSFET incorporates advanced passivation layers and die attachment techniques that enhance resistance to moisture, vibration, and thermal cycling. The device’s 100% avalanche tested production process ensures consistent performance across its operational lifespan, reducing field failures and maintenance requirements in critical applications.

With a minimum ordering quantity of 2,500 units and tape-and-reel packaging, the STD4NK80ZT4 supports both high-volume manufacturing and prototype development. Its combination of electrical performance, mechanical robustness, and design flexibility positions it as a preferred choice for engineers developing next-generation power electronics solutions.

Tags: Power MOSFET, N-Channel Transistor, High Voltage Semiconductor, DPAK Package, Industrial Electronics