STMicroelectronics STD1NK60T4 N-Channel MOSFET 600V 1A DPAK

High-Performance STMicroelectronics STD1NK60T4 N-Channel MOSFET

STMicroelectronics continues to redefine power electronics innovation with its STD1NK60T4 N-Channel MOSFET – a cutting-edge component engineered for demanding applications requiring exceptional voltage handling, thermal stability, and switching efficiency. Designed with advanced SuperMESH™ technology, this 600V MOSFET delivers reliable performance in compact power systems while maintaining minimal conduction losses.

Technical Excellence in Power Management

Operating at the forefront of semiconductor engineering, the STD1NK60T4 features a robust 600V drain-source voltage rating combined with a continuous drain current capacity of 1A (Tc). Its optimized R_DS(on) of 8.5Ω at 500mA and 10V gate-source voltage ensures minimal power dissipation during operation. With a gate charge of just 10nC at 10V, this device demonstrates superior switching characteristics that reduce energy losses in high-frequency applications.

The component's ±30V gate-source voltage tolerance provides enhanced protection against voltage spikes, while the 156pF input capacitance at 25V V_DS enables efficient signal processing. Engineered for industrial reliability, the device maintains performance across extreme temperatures (-55°C to 150°C) and offers 30W power dissipation capability at the case temperature.

Industrial-Grade Design for Versatile Applications

The DPAK (TO-252-3) surface-mount package combines mechanical durability with efficient thermal management, making it ideal for space-constrained designs requiring high reliability. This device excels in power supplies, motor control systems, LED lighting solutions, and industrial automation equipment where consistent performance under load is critical.

Key advantages include:

• Advanced SuperMESH™ technology for reduced on-resistance
• Optimized for high-speed switching applications
• Robust thermal performance with surface-mount compatibility
• Wide operating temperature range for harsh environments

With its tape-and-reel packaging format, the STD1NK60T4 ensures seamless integration into automated assembly processes. The device meets rigorous industry standards for quality and reliability, making it a preferred choice for engineers developing next-generation power solutions.

Superior Performance Characteristics

Engineers will appreciate the device's 3.7V gate threshold voltage (at 250µA) that enables precise control while maintaining energy efficiency. The 250µA threshold current ensures stable operation across varying load conditions. This combination of specifications makes the STD1NK60T4 particularly suitable for applications requiring precise current regulation and minimal standby losses.

As part of STMicroelectronics' SuperMESH™ family, this MOSFET benefits from decades of semiconductor innovation. The technology behind this device has been proven in millions of applications worldwide, establishing a strong track record of reliability and performance in real-world operating conditions.

Why Choose the STD1NK60T4?

This N-Channel MOSFET represents the perfect balance between performance, reliability, and cost-effectiveness. Its advanced specifications make it suitable for both traditional power electronics and emerging energy-efficient systems. The device's exceptional thermal stability ensures long-term reliability in demanding environments, while its compact footprint supports modern design requirements.

Whether you're developing industrial control systems, power adapters, or lighting solutions, the STMicroelectronics STD1NK60T4 offers the technical capabilities and reliability needed to deliver superior products to market. With its comprehensive protection features and proven performance metrics, this MOSFET provides the foundation for creating robust and efficient power solutions.

Tags: Power MOSFET, N-Channel Transistor, High Voltage Semiconductor, Surface Mount Device, STMicroelectronics Components