STMicroelectronics STD16N60M2 MOSFET - High-Power N-Channel Transistor
- Brand: STMicroelectronics
- Product Code: STD16N60M2
- Availability: In Stock
$0.64
- Ex Tax: $0.64
Revolutionizing Power Management with STMicroelectronics STD16N60M2 MOSFET
STMicroelectronics continues to push the boundaries of power electronics with its groundbreaking STD16N60M2 MOSFET. This high-performance N-Channel transistor, part of the MDmesh™ M2 family, represents a perfect blend of advanced silicon technology and innovative packaging solutions. Designed for demanding industrial and automotive applications, this component delivers exceptional reliability while maintaining optimal energy efficiency across various operating conditions.
Technical Excellence in Compact Packaging
Housed in a surface-mount DPAK (TO-252-3) package, the STD16N60M2 combines compact dimensions with remarkable thermal performance. Its 600V voltage rating and 12A continuous drain current capability make it ideal for high-voltage switching applications where space constraints and thermal management are critical. The device's 320mΩ maximum RDS(on) at 10V gate drive ensures minimal conduction losses, while the 19nC gate charge rating enables fast switching transitions with reduced driver requirements.
Key specifications include:
| Parameter | Value |
|---|---|
| Max Voltage | 600V |
| Continuous Drain Current | 12A |
| RDS(on) Max | 320mΩ @ 10V VGS |
| Gate Charge | 19nC |
| Operating Temperature | Up to 150°C |
Advanced Features for Demanding Applications
The STD16N60M2 incorporates STMicroelectronics' proprietary MDmesh™ technology, delivering enhanced performance across multiple metrics. Its optimized on-resistance characteristics maintain stability across varying temperatures, while the ±25V gate voltage rating provides robustness against voltage transients. The device's 700pF input capacitance at 100V VDS ensures compatibility with standard gate drivers while maintaining high-frequency switching capabilities.
This power MOSFET excels in applications requiring:
- High-efficiency power conversion
- Compact industrial power supplies
- Automotive electrical systems
- Renewable energy inverters
- Motor control circuits
Performance-Driven Design Philosophy
Engineered with ST's commitment to quality, the STD16N60M2 maintains exceptional performance across its operational lifespan. The device's thermal design allows for 110W power dissipation at case temperatures, ensuring reliable operation even under continuous load conditions. With its 4V gate threshold voltage (at 250µA), the transistor achieves optimal balance between switching speed and control precision.
Manufacturers benefit from:
- Reduced system losses through optimized RDS(on)
- Enhanced thermal reliability via DPAK packaging
- Space-saving surface-mount integration
- Compatibility with standard PCB assembly processes
Future-Proof Power Solutions
As industries transition towards more energy-efficient systems, the STD16N60M2 provides a proven solution for next-generation power electronics. Its compliance with modern environmental standards, combined with STMicroelectronics' extensive application support, makes it a preferred choice for engineers developing innovative power management systems. Whether in industrial automation, automotive electronics, or renewable energy applications, this MOSFET delivers consistent performance with minimal design compromises.
Tags: Power Electronics, Industrial Components, Automotive Semiconductors, Surface Mount Devices, Energy Efficiency