STMicroelectronics STL8N80K5 N-Channel MOSFET 800V 4.5A PowerFlat
- Brand: STMicroelectronics
- Product Code: STL8N80K5
- Availability: In Stock
$1.10
- Ex Tax: $1.10
High-Performance Power Management with STM STL8N80K5 MOSFET
STMicroelectronics continues to redefine power efficiency standards with its STL8N80K5 N-Channel MOSFET, a cutting-edge component designed for demanding industrial and power conversion applications. This advanced semiconductor device combines robust electrical characteristics with innovative packaging technology, making it ideal for modern power systems requiring compact solutions and superior thermal performance.
Technical Excellence in Power Electronics
Engineered with ST's proprietary SuperMESH5™ technology, this 800V power transistor delivers exceptional performance metrics that set new benchmarks in the industry. The device's optimized silicon design achieves a remarkable balance between low on-state resistance (Rds(on)) and fast switching capabilities, enabling engineers to create highly efficient power conversion systems while maintaining exceptional reliability.
At the heart of this MOSFET's capabilities lies its ability to handle significant electrical loads. With a continuous drain current rating of 4.5A at 25°C ambient temperature and a maximum drain-source voltage of 800V, the STL8N80K5 provides robust performance in high-voltage applications. The device's ±30V gate-source voltage tolerance ensures reliable operation even in challenging electrical environments.
| Parameter | Value |
|---|---|
| Rds(on) Max | 950mΩ @ 3A, 10V Vgs |
| Gate Charge | 16.5nC @ 10V Vgs |
| Input Capacitance | 450pF @ 100V Vds |
| Operating Temperature | -55°C to 150°C |
Innovative Packaging for Enhanced Thermal Performance
The PowerFlat™ (5x6) surface mount package represents a significant advancement in semiconductor packaging technology. This space-saving design not only reduces PCB footprint requirements but also improves thermal dissipation through its optimized lead frame structure. The 8-PowerVDFN package configuration enables efficient heat transfer, allowing the device to maintain rated performance even in high-temperature environments.
For power supply designers, the STL8N80K5's 42W power dissipation capability (at TC) combined with its 10V gate drive optimization provides significant design flexibility. The device's 5V gate threshold voltage (at 100µA) ensures compatibility with standard logic-level drive circuits while maintaining precise control over switching characteristics.
Applications and System Integration
This versatile N-Channel MOSFET excels in a wide range of applications including:
- Industrial power supplies and converters
- Motor control systems
- Renewable energy inverters
- High-voltage DC-DC converters
- Automotive power management systems
The device's combination of high voltage capability, compact packaging, and robust thermal performance makes it particularly well-suited for modern power systems where space constraints and efficiency requirements demand innovative component solutions.
Reliability and Long-Term Performance
Engineered for demanding environments, the STL8N80K5 maintains stable operation across extreme temperature ranges (-55°C to 150°C). Its rugged construction and advanced passivation techniques ensure long-term reliability in harsh operating conditions. The device's tape and reel packaging format facilitates automated assembly processes while maintaining component integrity during manufacturing.
Tags: Power Management, MOSFET Transistor, High Voltage MOSFET, Surface Mount Device, PowerFlat Package