STMicroelectronics STL36N60M6 MOSFET N-Channel 600V 25A PowerFlat™ HV - High-Performance Power Management
- Brand: STMicroelectronics
- Product Code: STL36N60M6
- Availability: In Stock
$0.98
- Ex Tax: $0.98
Revolutionizing Power Management with STMicroelectronics' STL36N60M6 MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its MDmesh™ M6 series. The STL36N60M6 stands out as a cutting-edge N-Channel MOSFET engineered for demanding applications requiring high voltage tolerance and exceptional thermal efficiency. This 600V, 25A PowerFlat™ HV device combines advanced silicon technology with innovative packaging to deliver unparalleled performance in industrial, automotive, and renewable energy systems.
Technical Excellence in Power Semiconductor Design
At the heart of the STL36N60M6 lies a meticulously optimized MOSFET structure that achieves an impressive 110mOhm on-state resistance at 12.5A and 10V gate drive. This remarkable Rds(on) value translates to reduced conduction losses and improved system efficiency, making it ideal for power conversion applications where thermal management is critical. The device's gate charge of 44.3nC at 10V further enhances switching performance, enabling faster transitions and minimizing energy losses during operation.
Engineered for reliability in harsh environments, this MOSFET features a ±25V gate voltage rating that provides robust protection against voltage spikes while maintaining operational stability. With a maximum power dissipation of 160W (Tc) and thermal shutdown characteristics that ensure operation within safe temperature limits (-55°C to 150°C), the device demonstrates exceptional durability in demanding conditions.
| Key Specification | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 600 V |
| Continuous Drain Current | 25A (Tc) |
| Rds(on) Max | 110mOhm @ 12.5A, 10V |
| Gate Charge (Qg) | 44.3 nC @ 10 V |
Innovative Packaging for Enhanced Thermal Performance
The STL36N60M6's PowerFlat™ (8x8) HV package represents a significant advancement in semiconductor packaging technology. This surface-mount 8-PowerVDFN format combines the benefits of low profile design with superior heat dissipation capabilities. The package's optimized thermal path enables efficient heat transfer to the PCB, allowing designers to implement compact yet powerful power systems without compromising reliability.
The device's 1960pF input capacitance at 100V and 4.75V gate threshold voltage ensure compatibility with standard gate drive circuits while maintaining fast switching characteristics. These parameters make it particularly well-suited for applications such as motor drives, renewable energy inverters, and industrial power supplies where switching efficiency directly impacts system performance.
Applications and System Benefits
STMicroelectronics has designed the STL36N60M6 to address the growing demand for high-efficiency power solutions across multiple industries. Its unique combination of performance characteristics makes it an excellent choice for:
• High-frequency DC-DC converters requiring minimal conduction losses
• Solar inverters needing reliable high-voltage switching
• Motor control systems demanding precise power delivery
• Industrial power supplies where thermal management is critical
By incorporating this MOSFET into their designs, engineers can achieve significant improvements in system efficiency while reducing component count and overall solution size. The device's tape & reel packaging further enhances manufacturing efficiency, enabling seamless integration into automated production lines.
Tags: Power Management, N-Channel MOSFET, High Voltage, Industrial Electronics, Automotive Applications