STMicroelectronics STF10P6F6 P-Channel MOSFET 60V 10A TO-220FP

STMicroelectronics STF10P6F6 P-Channel MOSFET 60V 10A TO-220FP

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High-Performance P-Channel MOSFET for Demanding Power Applications

STMicroelectronics' STF10P6F6 DeepGATE™ and STripFET™ VI series power MOSFETs represent the cutting edge of semiconductor technology for high-efficiency power management systems. Designed with advanced P-channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) architecture, this device delivers exceptional electrical performance while maintaining robust thermal stability in demanding industrial, automotive, and consumer electronics applications.

Advanced Technical Specifications

Operating at 60 volts with a continuous drain current capacity of 10A, this TO-220FP packaged transistor combines high voltage handling with optimized conduction efficiency. Its 160mΩ maximum on-resistance at 5A and 10V gate-source voltage ensures minimal power losses, while the 6.4nC gate charge at 10V drive voltage enables rapid switching performance. The ±20V gate-source voltage tolerance provides enhanced operational flexibility, complemented by 4V gate threshold voltage at 250µA.

ParameterValue
Drain-Source Voltage60V
Continuous Drain Current10A
On-Resistance160mΩ
Gate Charge6.4nC
Operating Temperature150°C
Industrial Grade Reliability

Manufactured in STMicroelectronics' state-of-the-art facilities, this through-hole mount device features a TO-220-3 Full Pack package designed for optimal thermal dissipation. The 20W power dissipation rating at case temperature ensures reliable operation under continuous load conditions, while the 340pF input capacitance at 48V VDS maintains signal integrity in high-frequency applications. Its automotive-qualified construction meets rigorous industry standards for vibration resistance and thermal cycling performance.

Design Advantages

Engineers benefit from the STF10P6F6's balanced performance profile that combines low on-state resistance with fast switching characteristics. The device's DeepGATE™ technology optimizes cell density while maintaining breakdown voltage integrity, and the STripFET™ VI structure minimizes parasitic inductance for improved transient response. These features make it particularly suitable for DC-DC converters, motor control circuits, and battery management systems requiring precise power regulation.

Application Versatility

This 60V P-channel MOSFET finds application in diverse systems ranging from automotive powertrain electronics to renewable energy inverters. Its high temperature operating range makes it suitable for under-hood automotive environments and industrial motor drives. The device's packaging compatibility with standard TO-220 mounting techniques simplifies integration into existing PCB layouts while maintaining service life reliability through its rated 150°C junction temperature operation.

Tags: Power Electronics, Automotive Components, MOSFET Transistors, Semiconductor Devices, Through Hole Mount

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