STMicroelectronics STW4N150 N-Channel PowerMESH™ MOSFET 1500V 4A for High-Power Switching Applications
- Brand: STMicroelectronics
- Product Code: STW4N150
- Availability: In Stock
$0.79
- Ex Tax: $0.79
Revolutionizing Power Management with STW4N150 MOSFET
The STW4N150 from STMicroelectronics represents the pinnacle of innovation in power semiconductor technology. As part of the renowned PowerMESH™ family, this N-channel MOSFET delivers exceptional performance for demanding high-voltage applications. With its 1500V drain-source voltage rating and 4A continuous drain current capability, this device redefines reliability and efficiency in power switching systems.
Technical Excellence in Power Semiconductor Design
Engineered with advanced MOSFET technology, the STW4N150 combines cutting-edge specifications with proven reliability. Its 7Ω maximum on-resistance at 2A and 10V gate-source voltage ensures minimal conduction losses, while the 50nC gate charge rating enables rapid switching transitions. The device's ±30V gate-source voltage tolerance provides robustness against voltage spikes, making it ideal for challenging environments.
What truly sets this TO-247-3 packaged transistor apart is its comprehensive feature set:
| Parameter | Value |
|---|---|
| Max Voltage (Vdss) | 1500V |
| Continuous Current (Id) | 4A |
| On-Resistance (Rds(on)) | 7Ω @ 2A, 10V |
| Gate Charge (Qg) | 50nC @ 10V |
| Operating Temperature | 150°C (TJ) |
Optimized for Demanding Applications
The STW4N150's unique combination of high voltage capability and efficient thermal management makes it perfect for various power electronics applications. From industrial motor drives to renewable energy systems, this device delivers consistent performance in environments where reliability is critical. Its 160W power dissipation rating at case temperature ensures stable operation even under heavy loads, while the 1300pF input capacitance at 25V enables precise switching control.
Key advantages include:
- Exceptional thermal stability through TO-247-3 packaging
- High immunity to voltage transients
- Reduced switching losses for improved system efficiency
- Compact form factor with robust mechanical design
Real-World Performance Benefits
In practical applications, the STW4N150 demonstrates remarkable performance characteristics. Its 5V gate threshold voltage at 250µA ensures reliable turn-on while maintaining compatibility with standard logic circuits. The device's PowerMESH™ structure minimizes parasitic inductance, enabling faster switching speeds without compromising reliability.
Engineers designing power supplies, battery management systems, or motor control circuits will appreciate the device's ability to maintain efficiency across diverse operating conditions. The ±30V gate-source voltage range provides additional design flexibility, while the 150°C maximum operating temperature allows for deployment in thermally constrained environments.
When integrated into modern power systems, the STW4N150 delivers measurable benefits:
- Up to 20% reduction in conduction losses
- Significant improvement in thermal management
- Enhanced system reliability through robust design
- Compact solution for space-constrained applications
As a member of STMicroelectronics' PowerMESH™ portfolio, this MOSFET exemplifies the company's commitment to advancing power semiconductor technology. Its comprehensive protection features and high-voltage capability make it an ideal choice for engineers seeking reliable power management solutions.
Tags: PowerMESH MOSFET, High-Voltage Transistors, N-Channel Power FETs, TO-247-3 Components, Industrial Power Switches