STM STU6N60M2 600V 4.5A N-Channel MOSFET - High-Performance Power Transistor
- Brand: STMicroelectronics
- Product Code: STU6N60M2
- Availability: In Stock
$0.46
- Ex Tax: $0.46
Revolutionizing Power Efficiency with the STU6N60M2 N-Channel MOSFET
In the ever-evolving landscape of power electronics, the STMicroelectronics STU6N60M2 emerges as a game-changer for engineers seeking reliable, high-voltage switching solutions. This N-channel MOSFET combines cutting-edge MDmesh™ II Plus technology with robust design features to deliver exceptional performance across industrial, automotive, and consumer applications. With its 600V rating and optimized on-resistance, this device redefines efficiency in power conversion systems.
Technical Excellence in Power Management
At the heart of the STU6N60M2 lies a meticulously engineered silicon die that achieves a remarkable 1.2Ω Rds(on) at just 2.25A drain current and 10V gate drive. This low on-state resistance translates to reduced conduction losses, making it ideal for applications demanding energy efficiency. The device's advanced trench gate structure and field oxide optimization ensure minimal switching losses while maintaining exceptional thermal stability.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 4.5A (Tc) |
| Gate Charge | 13.5nC @ 10V |
| Operating Temperature | -55°C ~ 150°C |
Unmatched Reliability in Demanding Environments
Engineered to withstand extreme conditions, the STU6N60M2 features a rugged TO-251 (IPAK) package with through-hole mounting capability. Its ±25V gate-source voltage tolerance and 4V threshold voltage ensure stable operation even in noisy environments. The device's 232pF input capacitance at 100V Vds enables fast switching while maintaining control circuit compatibility.
This power MOSFET excels in applications requiring precise power regulation, from motor drives and lighting systems to power supplies and battery management circuits. Its 60W power dissipation rating (at Tc) allows operation in high-temperature environments without derating, reducing the need for complex cooling solutions.
Design Flexibility and Application Versatility
The STU6N60M2's combination of parameters makes it an ideal choice for designers working on:
- High-voltage DC-DC converters
- Electric vehicle charging systems
- Industrial motor control circuits
- Smart grid power management
- LED lighting drivers
Its compatibility with standard 10V gate drivers simplifies integration with existing control architectures while maintaining optimal performance. The device's inherent stability across temperature ranges (-55°C to 150°C) ensures consistent operation in both cryogenic and high-heat environments.
Why Choose the STU6N60M2?
Compared to conventional power transistors, this MOSFET offers several key advantages:
- Reduced system losses through optimized Rds(on)
- Enhanced thermal management via low-profile packaging
- Improved reliability with advanced junction isolation
- Cost-effective solution for mid-power applications
- Compliance with RoHS environmental standards
As part of STMicroelectronics' MDmesh™ II Plus series, the STU6N60M2 represents the culmination of decades of power semiconductor expertise. Its balanced performance profile makes it a versatile component for both traditional and emerging power electronics applications.
Tags: Power MOSFET, N-Channel, High Voltage, Switching Applications, STMicroelectronics