STMicroelectronics STQ1NK80ZR-AP N-Channel MOSFET 800V 300mA TO-92-3 Package

STMicroelectronics STQ1NK80ZR-AP N-Channel MOSFET: High-Performance Power Management Solution

The STMicroelectronics STQ1NK80ZR-AP N-Channel MOSFET represents a breakthrough in power semiconductor technology, combining robust electrical characteristics with advanced design features to deliver exceptional performance in high-voltage applications. As part of STM's renowned SuperMESH™ family, this TO-92-3 packaged transistor offers engineers a reliable solution for demanding power management requirements across various industrial and consumer electronics sectors.

Advanced Silicon Technology for Enhanced Efficiency

Engineered with STMicroelectronics' proprietary SuperMESH™ technology, the STQ1NK80ZR-AP achieves an optimal balance between conduction and switching losses. This innovative design approach results in a remarkable 800V drain-source breakdown voltage (Vdss) while maintaining a low on-state resistance of 16Ω at 10V Vgs. The device's 500mA maximum drain current capability (tested at TC conditions) ensures stable operation even under transient load scenarios, making it ideal for power supply designs requiring consistent performance.

Key to its efficiency is the device's 7.7nC gate charge specification at 10V Vgs, which significantly reduces switching losses in high-frequency applications. The ±30V gate-source voltage tolerance provides enhanced protection against voltage spikes, while the 4.5V gate threshold voltage (measured at 50µA) ensures compatibility with standard logic-level drive circuits. With an input capacitance of 160pF at 25V Vds, this MOSFET demonstrates excellent high-speed switching characteristics suitable for modern power conversion systems.

Thermal Performance and Mechanical Design

The TO-92-3 package format combines compact dimensions with excellent thermal dissipation capabilities. The formed leads in the TO-226AA configuration facilitate easy PCB mounting while maintaining mechanical stability. With a maximum power dissipation rating of 3W (at TC conditions), the package efficiently transfers heat to the printed circuit board, ensuring reliable operation in ambient temperatures ranging from -55°C to 150°C. This wide operating temperature range makes the STQ1NK80ZR-AP suitable for deployment in both industrial control systems and outdoor electronics applications.

The device's through-hole mounting configuration provides enhanced mechanical robustness compared to surface-mount alternatives, making it particularly well-suited for applications subject to vibration or thermal cycling. The package's insulation resistance and creepage distances meet international safety standards, ensuring compliance with various regulatory requirements for power electronics equipment.

Application Versatility

This N-Channel MOSFET finds application in a diverse range of power management scenarios. Its high voltage rating and efficient switching characteristics make it an excellent choice for:

In power supply designs, the STQ1NK80ZR-AP excels in both buck and boost converter topologies, delivering efficient DC-DC conversion with minimal thermal derating. The device's inherent avalanche ruggedness provides additional reliability in inductive load switching applications, while its low leakage current (50µA max at Vth) ensures minimal standby power consumption in battery-operated systems.

The transistor's robust construction and automotive-grade reliability make it particularly suitable for transportation applications. In motor control circuits, its fast switching characteristics reduce electromagnetic interference (EMI) generation, simplifying compliance with EMC regulations. The device's ability to operate across extreme temperature ranges makes it ideal for deployment in industrial automation systems requiring consistent performance in harsh environments.

Quality and Reliability

As part of STMicroelectronics' industrial component portfolio, the STQ1NK80ZR-AP undergoes rigorous quality control testing to ensure compliance with the highest industry standards. The device's active status in ST's product catalog reflects its proven reliability and ongoing availability for long-term design projects. With 128,000 units in stock and available in cut-tape packaging, this MOSFET offers both design flexibility and volume procurement options for production requirements.

Manufacturers benefit from ST's comprehensive technical support ecosystem, including SPICE models, application notes, and design tools that simplify circuit optimization. The device's parametric stability across operating conditions ensures consistent performance throughout its service life, reducing field failure rates and maintenance requirements in deployed systems.

Tags: Power MOSFET, High Voltage Transistor, TO-92-3 Package, SuperMESH Technology, STM Components