STMicroelectronics STP180N10F3 N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STP180N10F3
- Availability: In Stock
$6.00
- Ex Tax: $6.00
STMicroelectronics STP180N10F3: High-Performance Power MOSFET for Demanding Applications
In the realm of power electronics, the STP180N10F3 from STMicroelectronics stands as a testament to advanced engineering and reliability. Part of the renowned STripFET™ III family, this N-channel MOSFET combines exceptional electrical characteristics with robust thermal performance, making it an ideal choice for industrial and automotive applications where efficiency and durability are paramount.
Key Technical Specifications
Engineered to handle high current loads while maintaining minimal power loss, the STP180N10F3 features a drain-source voltage rating of 100V and a continuous drain current capability of 120A at 25°C. Its ultralow on-state resistance of 5.1mΩ (measured at 60A and 10V gate-source voltage) significantly reduces conduction losses, enabling cooler operation and improved system efficiency. The device's gate charge of 114.6nC at 10V further enhances switching performance, making it suitable for high-frequency applications.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 120A @ 25°C |
| Rds(on) Max | 5.1mΩ @ 60A, 10V |
| Gate Charge (Qg) | 114.6nC @ 10V |
| Operating Temperature | -55°C to 175°C |
Advanced Design Features
The STP180N10F3 incorporates STMicroelectronics' proprietary STripFET™ III technology, which optimizes the balance between conduction and switching losses. With a maximum gate-source voltage of ±20V and a threshold voltage of 4V (at 250µA), this MOSFET offers excellent control characteristics while maintaining compatibility with standard gate drivers. Its through-hole TO-220 package ensures reliable thermal management, with a power dissipation capability of 315W at case temperature.
Engineers will appreciate the device's 6,665pF input capacitance (measured at 25V Vds), which contributes to stable operation in demanding environments. The MOSFET's rugged design includes protection against thermal runaway, making it suitable for applications in harsh operating conditions.
Typical Applications
This high-performance transistor finds its home in a wide range of applications including motor drives, power supplies, battery management systems, and automotive electronics. Its combination of high current capability and low on-resistance makes it particularly well-suited for:
- Industrial motor control systems
- High-efficiency DC-DC converters
- Electric vehicle powertrain components
- Renewable energy inverters
The device's -55°C to 175°C operating temperature range ensures reliable performance in extreme environments, while its TO-220 packaging maintains compatibility with traditional PCB assembly processes.
Design Advantages
By integrating advanced STripFET™ III technology, this MOSFET offers designers several key advantages. The ultralow Rds(on) reduces component count in parallel configurations, while the fast switching characteristics minimize the need for complex snubber circuits. The device's thermal stability allows for more compact heat sink designs, contributing to overall system miniaturization.
In modern power electronics, where efficiency and reliability are critical, the STP180N10F3 provides a compelling solution. Its combination of high current handling, low conduction losses, and robust packaging makes it a valuable component for engineers developing next-generation power systems.
Tags: Power Management, Automotive Electronics, Industrial Applications, High Current MOSFET, TO-220 Package