STMicroelectronics STP150N10F7AG N-Channel Power MOSFET

STMicroelectronics STP150N10F7AG N-Channel Power MOSFET

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Revolutionizing Power Management with STP150N10F7AG N-Channel MOSFET

The STP150N10F7AG from STMicroelectronics represents a significant leap in power semiconductor technology, offering engineers and designers an exceptional combination of performance, reliability, and efficiency. This advanced N-Channel Power MOSFET is specifically engineered for high-current applications where minimal conduction losses and superior thermal management are critical. With its robust 100V rating and 110A continuous drain current capacity, this device sets new standards in power conversion systems.

Key Technical Advantages

At the heart of the STP150N10F7AG's impressive performance lies its exceptionally low on-state resistance of just 4.2mΩ. This remarkable specification enables minimal voltage drop during operation, directly translating to reduced power dissipation and improved system efficiency. The device's advanced STRIPFET™ F7 technology ensures optimal current distribution across the die, maintaining stable performance even under heavy load conditions.

Engineers working with power supplies, motor drives, or battery management systems will appreciate the device's comprehensive feature set. Its ±20V gate voltage rating provides enhanced operational safety, while the 127nC gate charge value ensures fast switching transitions. The integrated through-hole packaging (TO-220) facilitates effective heat dissipation, maintaining reliable operation across the full industrial temperature range of -55°C to 175°C.

ParameterValue
Max Vds100V
Max Id110A @ 25°C
Rds(on)4.2mΩ @ 10V Vgs
Gate Charge127nC
PackageTO-220-3
Performance-Driven Design

The STP150N10F7AG's design philosophy centers around maximizing energy efficiency while maintaining robust operation in demanding environments. Its optimized input capacitance (9000pF @ 50V) ensures stable gate control without compromising switching speed. The device's 250W power dissipation rating (at case temperature) allows for high-current applications without requiring excessive heatsinking solutions.

For applications requiring precise gate control, the device maintains a well-defined threshold voltage range (4.5V max @ 250µA). This characteristic enables predictable turn-on behavior while maintaining compatibility with standard gate drivers. The device's 10V drive voltage optimization ensures optimal performance across a wide range of operating conditions.

Applications and System Integration

This versatile power MOSFET excels in various high-performance applications including:

  • DC-DC converters and power supplies
  • Electric vehicle charging systems
  • Industrial motor drives
  • Battery management systems
  • Renewable energy inverters

Designers implementing the STP150N10F7AG will benefit from its drop-in compatibility with standard TO-220 footprints, simplifying both prototyping and production. The device's through-hole mounting configuration provides mechanical stability while facilitating effective thermal coupling to heatsinks when required.

Reliability and Longevity

STMicroelectronics has engineered the STP150N10F7AG with long-term reliability as a core requirement. The device's operating temperature range extends beyond standard industrial specifications, ensuring dependable performance in harsh environments. Its ruggedized construction maintains functionality under transient overvoltage conditions, while the integrated thermal protection mechanisms prevent damage from excessive power dissipation.

The device's active status in production guarantees long-term availability for ongoing projects. This reliability extends to its electrical characteristics, with stable performance maintained across the entire operating life. The advanced packaging technology minimizes mechanical stress on the die, further enhancing field reliability.

Tags: Power Management, High Current MOSFET, Industrial Electronics, Power Supply Components

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