STMicroelectronics STP120NF10 N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STP120NF10
- Availability: In Stock
$1.10
- Ex Tax: $1.10
High-Performance Power Transistor for Demanding Applications
STMicroelectronics' STP120NF10 N-Channel MOSFET represents the latest advancement in power semiconductor technology. Engineered with precision for high-current applications, this TO-220 packaged transistor delivers exceptional performance in automotive systems, industrial motor controls, and power supply designs. With its robust 100V voltage rating and 110A continuous drain current capability, this STripFET™ II series component stands as a reliable solution for engineers pushing the boundaries of power efficiency.
Technical Excellence in Power Management
The STP120NF10's advanced MOSFET architecture achieves a remarkable 10.5mΩ on-resistance at 60A load, minimizing power losses in high-current scenarios. Its optimized gate charge characteristics (233nC @ 10V) enable rapid switching performance while maintaining thermal stability. The device's ±20V gate voltage tolerance provides design flexibility while protecting against voltage transients.
| Parameter | Specification |
|---|---|
| Max Voltage | 100V |
| Continuous Current | 110A |
| Rds(on) Max | 10.5mΩ |
| Package Type | TO-220 |
Thermal Performance and Reliability
Designed for demanding environments, this transistor operates reliably from -55°C to 175°C junction temperature. Its 312W power dissipation rating (at case temperature) ensures stable operation in high-temperature applications. The device's 5200pF input capacitance measurement at 25V demonstrates optimized capacitance characteristics for reduced switching losses.
Applications and Implementation
Engineers increasingly specify the STP120NF10 in electric vehicle systems, solar inverters, and industrial automation equipment. Its through-hole TO-220 package facilitates efficient heatsinking while maintaining mechanical stability in vibration-prone environments. The transistor's 4V gate threshold voltage enables seamless integration with standard logic circuits while maintaining immunity to false triggering.
Design Considerations
When implementing this MOSFET in power designs, engineers should consider its 233nC gate charge requirements for optimal driver selection. The device's 5200pF input capacitance impacts switching speed calculations, particularly in high-frequency applications. Proper thermal management through adequate heatsinking is crucial to maintain the 110A current rating across operating temperature ranges.
Tags: Power Electronics, High Efficiency, Automotive Applications, Industrial Automation, Power Supplies