STMicroelectronics STN1NK60Z N-Channel MOSFET | 600V 300mA SOT-223
- Brand: STMicroelectronics
- Product Code: STN1NK60Z
- Availability: In Stock
$0.15
- Ex Tax: $0.15
High-Performance Power Management with STN1NK60Z MOSFET
In modern power electronics, component reliability and efficiency are paramount. The STMicroelectronics STN1NK60Z N-Channel MOSFET emerges as a critical solution for engineers demanding precise control in high-voltage applications. This advanced power transistor combines robust 600V capability with optimized thermal performance in a compact SOT-223 package, making it ideal for switching circuits requiring miniaturization without compromising durability.
Technical Excellence in Power Semiconductor Design
Engineered with STMicroelectronics' proprietary SuperMESH™ technology, this MOSFET delivers exceptional electrical characteristics. Its 600V drain-source voltage rating ensures stable operation in demanding environments, while the 300mA continuous drain current capacity supports efficient power delivery. The device's 15Ω Rds(on) at 400mA and 10V gate-source voltage minimizes conduction losses, directly improving system energy efficiency.
With a gate charge (Qg) of 6.9nC at 10V, the STN1NK60Z enables rapid switching transitions, crucial for modern high-frequency power converters. The ±30V gate-source voltage rating provides enhanced operational margin, while the 94pF input capacitance at 25V ensures predictable performance across temperature ranges from -55°C to 150°C. These specifications make it particularly suitable for industrial power supplies, motor control circuits, and LED lighting systems.
| Parameter | Value |
|---|---|
| Max Voltage | 600V |
| Continuous Current | 300mA |
| Rds(on) Max | 15Ω @ 400mA |
| Gate Charge | 6.9nC |
| Package | SOT-223 |
Thermal Efficiency in Surface Mount Design
The SOT-223 package combines surface-mount compatibility with excellent thermal dissipation characteristics. This four-pin configuration (TO-261AA) provides enhanced heat sinking through the PCB, enabling 3.3W power dissipation at case temperatures. The package's compact 6.7mm x 3.7mm footprint supports high-density board layouts while maintaining reliable thermal performance in ambient temperatures up to 150°C junction temperature.
For designers seeking alternatives, this component competes favorably with similar devices from Infineon and ON Semiconductor while maintaining STM's signature quality. The device's 4.5V gate threshold voltage ensures compatibility with standard logic drivers, simplifying gate drive circuit design.
Cost-Effective Power Solutions
Available in Tape & Reel packaging with volume pricing starting at $0.15 per unit (QTY:4000), the STN1NK60Z offers exceptional value for production applications. Its 'Active' product status guarantees long-term supply stability, while the RoHS-compliant construction meets modern environmental standards. Designers benefit from immediate availability through authorized distributors worldwide, with Digi-Key and Mouser Electronics listing comprehensive technical documentation.
Tags: Power Transistors, N-Channel MOSFETs, High Voltage FETs, STM Components, SOT-223 Devices