STMicroelectronics STL7N60M2 N-Channel MOSFET 600V 5A PowerFLAT - High-Performance Power Transistor
- Brand: STMicroelectronics
- Product Code: STL7N60M2
- Availability: In Stock
$0.45
- Ex Tax: $0.45
Introducing the STMicroelectronics STL7N60M2: A Revolution in Power Transistor Technology
In the ever-evolving landscape of semiconductor technology, the STL7N60M2 from STMicroelectronics emerges as a groundbreaking solution for engineers and designers seeking unmatched efficiency in power management systems. This advanced N-Channel MOSFET combines cutting-edge MDmesh™ technology with innovative PowerFLAT packaging to deliver superior performance in high-voltage applications across industrial, automotive, and consumer electronics sectors.
Technical Excellence in Compact Packaging
Engineered for demanding applications, this 600V power transistor features a remarkably low RDS(on) of 1.05Ω at 2A and 10V gate-source voltage. The device's PowerFLAT™ (5x5) surface-mount package enables efficient thermal management while maintaining a compact footprint, making it ideal for space-constrained designs that require robust power handling capabilities.
With its maximum drain-source voltage rating of 600V and continuous drain current of 5A (at Tc), the STL7N60M2 demonstrates exceptional versatility in various power conversion scenarios. The component's gate charge characteristics (8.8nC at 10V) ensure fast switching performance, reducing power losses in high-frequency operations while maintaining excellent thermal stability.
Advanced Features for Demanding Applications
This power transistor incorporates STMicroelectronics' proprietary MDmesh™ technology, which optimizes the electric field distribution across the die, resulting in improved avalanche ruggedness and enhanced reliability. The device's ±25V gate voltage rating provides additional protection against voltage spikes, while the 4V gate threshold voltage (at 250µA) ensures compatibility with standard logic-level controllers.
The STL7N60M2's thermal performance is particularly impressive, with a maximum power dissipation of 67W (Tc) when mounted on a suitable heatsink. This capability makes it an excellent choice for high-power density designs requiring efficient thermal management. The component's operating temperature range up to 150°C further enhances its suitability for demanding environments.
Parameter | Value |
---|---|
Drain-Source Voltage (VDSS) | 600V |
Continuous Drain Current (ID) | 5A (Tc) |
Max RDS(on) | 1.05Ω @ 2A, 10V |
Gate Charge (Qg) | 8.8nC @ 10V |
Input Capacitance (Ciss) | 271pF @ 100V |
Applications and Performance Benefits
Engineers can leverage the STL7N60M2's capabilities in a wide range of applications including:
Switching power supplies and DC-DC converters benefit significantly from this component's low conduction losses and efficient thermal characteristics. Motor control systems in industrial automation and consumer appliances can utilize its robust performance to achieve precise speed regulation while maintaining compact designs.
The device's PowerFLAT packaging offers significant advantages over traditional through-hole components, including reduced PCB area requirements and improved manufacturability through automated surface-mount processes. This makes it particularly suitable for high-volume production environments where cost-effectiveness and reliability are paramount.
Design Flexibility and Reliability
With its maximum operating temperature of 150°C and comprehensive safety features, the STL7N60M2 provides designers with exceptional flexibility in thermal management strategies. The component's robust construction and proven reliability in harsh operating conditions make it a preferred choice for mission-critical applications where failure is not an option.
For power supply designers, this MOSFET offers a compelling combination of high voltage capability and low on-resistance that enables the creation of highly efficient power conversion systems. Its compatibility with standard gate drive circuits simplifies implementation while maintaining optimal switching performance.
Tags: Power Transistor, High Voltage MOSFET, Industrial Electronics, Surface Mount Device, Power Supply Component