STMicroelectronics STFI6N65K3 SuperMESH3™ MOSFET N-Channel 650V 5.4A I2PAKFP

Advanced Power Management with STFI6N65K3 SuperMESH3™ MOSFET

Engineered for high-voltage applications requiring superior efficiency and reliability, STMicroelectronics' STFI6N65K3 SuperMESH3™ MOSFET represents a significant advancement in power semiconductor technology. This N-Channel MOSFET combines cutting-edge SuperMESH3™ technology with optimized thermal management to deliver exceptional performance in industrial power systems, motor control circuits, and energy-efficient power supplies.

Technical Excellence in Power Discrete Design

The STFI6N65K3 features a 650V drain-source voltage rating with a continuous drain current of 5.4A at 25°C. Its advanced silicon design achieves an impressive 1.3Ω Rds(on) at 2.7A with 10V Vgs, significantly reducing conduction losses while maintaining robust switching performance. The device's 33nC gate charge (Qg) enables rapid switching transitions, making it ideal for high-frequency power conversion applications.

Thermal Performance and Packaging

Housed in a thermally-enhanced I2PAKFP (TO-281) package with a TO-262-3 full pack configuration, this MOSFET delivers 30W maximum power dissipation at case temperature. The through-hole mounting format ensures reliable mechanical stability while the 880pF input capacitance at 50V Vds enables efficient parallel operation in high-current configurations.

Operating at temperatures up to 150°C junction rating, the device maintains performance stability in demanding industrial environments. Its ±30V gate-source voltage tolerance provides additional design flexibility while maintaining robust short-circuit protection.

Design Advantages in Power Applications

With a 4.5V gate threshold voltage (Vgs(th)) at 50µA, the STFI6N65K3 ensures compatible interfacing with standard logic-level controllers while maintaining minimal leakage current. The SuperMESH3™ technology's optimized cell structure reduces switching losses by up to 20% compared to previous-generation devices, making it particularly suitable for:

• Switch-mode power supplies (SMPS)
• Motor drive inverters
• Industrial automation equipment
• Renewable energy systems
• High-voltage DC-DC converters

The device's 150°C operating temperature range combined with its robust package design allows implementation in harsh thermal environments without derating. Designers benefit from simplified thermal management solutions while maintaining full performance specifications.

Technical Specifications Summary

This 650V power MOSFET incorporates advanced process technology to achieve exceptional avalanche energy ratings and improved body diode recovery characteristics. The device's 650V rating makes it particularly suitable for universal input voltage applications (85-265V AC) requiring enhanced voltage headroom. Its 1.3Ω Rds(on) specification ensures minimal conduction losses while maintaining excellent thermal performance in high-stress operating conditions.

Tags: Power Electronics, MOSFET Transistors, Industrial Semiconductors, Voltage Regulation, Energy Efficiency