STMicroelectronics STD9N65M2 MDmesh™ N-Channel MOSFET 650V 5A DPAK
- Brand: STMicroelectronics
- Product Code: STD9N65M2
- Availability: In Stock
$0.50
- Ex Tax: $0.50
STMicroelectronics STD9N65M2: High-Performance N-Channel MOSFET for Demanding Power Applications
The STMicroelectronics STD9N65M2 is a cutting-edge N-channel MOSFET engineered to deliver exceptional performance in high-voltage power switching applications. As part of ST's renowned MDmesh™ family, this device combines advanced silicon technology with optimized package design to provide superior efficiency, reliability, and thermal management for modern electronic systems.
Advanced Technical Specifications
Built on STMicroelectronics' proprietary MDmesh™ technology, the STD9N65M2 offers a remarkable 650V drain-source voltage rating while maintaining a low on-resistance of just 900mΩ at 2.5A and 10V gate-source voltage. This combination of high voltage capability and low conduction losses makes it ideal for applications requiring efficient power conversion and minimal thermal dissipation. The device maintains stable operation across a wide temperature range, with a maximum operating junction temperature of 150°C and thermal shutdown protection ensuring long-term reliability.
The DPAK surface-mount package (TO-252-3 format) provides excellent thermal performance through its low-profile design, enabling efficient heat dissipation in compact PCB layouts. With a maximum power dissipation rating of 60W at case temperature, this MOSFET can handle demanding power requirements while maintaining stable performance in challenging environments.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 650 V |
| Continuous Drain Current | 5A @ 25°C |
| On-Resistance (Rds(on)) | 900mΩ @ 2.5A, 10V |
| Gate Charge (Qg) | 10nC @ 10V |
| Operating Temperature | 150°C (TJ) |
Design Advantages and Applications
The STD9N65M2's advanced design features a 10nC gate charge at 10V drive voltage, enabling fast switching transitions and reduced switching losses. This characteristic makes it particularly suitable for high-frequency power conversion applications in industrial, automotive, and consumer electronics sectors. The ±25V gate-source voltage tolerance provides enhanced protection against voltage transients, while the 315pF input capacitance at 100V ensures stable operation in demanding environments.
Key applications include:
- Switch-mode power supplies (SMPS) for industrial equipment
- Motor control systems in automation and robotics
- Power factor correction circuits
- LED lighting drivers
- Uninterruptible power supplies (UPS)
Engineers will appreciate the device's 4V gate threshold voltage at 250µA, which enables compatibility with standard logic-level drive circuits while maintaining excellent noise immunity. The tape-and-reel packaging format (TO-252-3) facilitates automated assembly processes and ensures consistent component placement in high-volume manufacturing environments.
Performance-Driven Engineering
STMicroelectronics' MDmesh™ technology employed in the STD9N65M2 represents a significant advancement in power MOSFET design. This innovative approach optimizes the device's electric field distribution, resulting in reduced conduction losses while maintaining exceptional breakdown voltage characteristics. The technology's inherent advantages translate to improved system efficiency, reduced thermal management requirements, and enhanced overall product reliability.
When compared to conventional MOSFET solutions, the STD9N65M2 demonstrates superior performance metrics across multiple key parameters. Its optimized Rds(on) × Qg figure-of-merit (FOM) positions it as an ideal choice for designers seeking to minimize both conduction and switching losses in their power circuit designs. The device's robust construction and surface-mount packaging also contribute to enhanced mechanical stability in environments subject to vibration or thermal cycling.
Conclusion
The STMicroelectronics STD9N65M2 MDmesh™ N-channel MOSFET represents a comprehensive solution for modern power electronics applications requiring high voltage capability, efficient operation, and reliable performance. With its combination of advanced silicon technology, thermally optimized packaging, and industry-leading specifications, this component offers engineers a powerful tool for developing next-generation power systems that meet evolving energy efficiency standards while maintaining exceptional reliability.
Tags: N-Channel MOSFET, High Voltage Transistor, Power Switching Device, Semiconductor Components, DPAK Packaging