STMicroelectronics STD8N80K5 N-Channel MOSFET 800V 6A DPAK

STMicroelectronics STD8N80K5: High-Performance N-Channel MOSFET for Demanding Applications

The STMicroelectronics

STD8N80K5

represents the cutting-edge SuperMESH5™ technology in power electronics, delivering exceptional performance for engineers and designers working on high-voltage systems. This N-Channel MOSFET combines advanced specifications with reliable operation, making it an ideal choice for applications requiring robust power management solutions. With its 800V rating and optimized thermal characteristics, this device addresses the evolving needs of modern power conversion systems while maintaining exceptional efficiency.

Parameter	Specification
Max Voltage	800 V
Continuous Drain Current	6A @ 25°C
Rds(on) Max	950mΩ @ 3A, 10V
Gate Charge	16.5 nC @ 10V
Package Type	DPAK (TO-252-3)

Engineered for superior performance in industrial and automotive applications, the STD8N80K5 demonstrates STMicroelectronics' commitment to innovation in power semiconductor technology. Its advanced SuperMESH5™ structure minimizes switching losses while maintaining exceptional ruggedness, allowing designers to create more efficient and compact power systems. The device's ±30V gate voltage rating provides enhanced protection against voltage spikes, ensuring reliable operation in challenging environments.

For power supply designers, this MOSFET offers significant advantages in terms of thermal management and system efficiency. The DPAK surface-mount package enables automated assembly while maintaining excellent thermal dissipation capabilities. With its 110W power dissipation rating and operating temperature range from -55°C to 150°C, the device performs reliably in both extreme industrial environments and automotive under-hood applications. The 450pF input capacitance at 100V further enhances switching performance, making it suitable for high-frequency converter designs.

When compared to traditional high-voltage MOSFETs, the STD8N80K5 demonstrates remarkable improvements in several key areas. Its optimized on-resistance of 950mΩ at 3A and 10V drive voltage reduces conduction losses, while the 5V gate threshold voltage (at 100µA) ensures compatibility with standard gate drivers. The device's 16.5nC gate charge at 10V minimizes switching losses, making it particularly suitable for applications requiring high-frequency operation. These characteristics make it an excellent choice for motor drives, DC-DC converters, and industrial automation systems.

The STD8N80K5's comprehensive protection features and robust design make it particularly well-suited for challenging applications. Its advanced structure provides excellent avalanche energy capability, ensuring reliable operation even under unexpected voltage spikes. The TO-252-3 package format combines the benefits of surface-mount technology with the thermal advantages of through-hole components, enabling designers to optimize PCB layouts while maintaining thermal performance. This combination of features makes it an ideal solution for power factor correction circuits, LED lighting systems, and renewable energy applications.

Tags: N-Channel MOSFET, High Voltage Transistor, DPAK Packaging, Power Electronics, SuperMESH5 Technology