STMicroelectronics STD80N240K6 N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STD80N240K6
- Availability: In Stock
$0.78
- Ex Tax: $0.78
High-Performance N-Channel MOSFET for Demanding Power Applications
The STMicroelectronics STD80N240K6 represents a significant advancement in power transistor technology, designed to meet the rigorous demands of modern electronic systems requiring high-voltage operation and efficient power management. This N-Channel MOSFET combines cutting-edge semiconductor engineering with robust packaging to deliver exceptional performance in industrial, automotive, and consumer electronics applications.
Key Technical Specifications
Operating at an impressive 800 V drain-to-source voltage rating, this device maintains optimal performance even in high-stress environments. The 16A continuous drain current capability at 25°C, combined with a remarkably low on-resistance of 220mΩ (max) at 7A and 10V gate-source voltage, ensures minimal power loss and superior thermal efficiency. Its advanced gate charge characteristics (25.9 nC max at 10V) enable fast switching operations while maintaining stability across diverse load conditions.
| Parameter | Value |
|---|---|
| Rds(on) Max | 220mΩ @ 7A, 10V |
| Gate Charge | 25.9 nC @ 10V |
| Operating Temperature | -55°C to 150°C |
| Package Type | Surface Mount D-PAK |
Engineered for reliability in harsh operating environments, this MOSFET features ±30V gate-source voltage protection and a robust 105W power dissipation rating at case temperature. The device's thermal stability is further enhanced through its optimized die attach technology and advanced passivation layers, ensuring long-term reliability even under repetitive stress conditions.
Advanced Design Features
The STD80N240K6 incorporates STMicroelectronics' proprietary high-voltage technology, which balances die size optimization with electrical performance. Its 1350 pF input capacitance (max at 400V) enables efficient signal processing in high-frequency applications while maintaining voltage stability. The device's 4V gate threshold voltage (at 100µA) ensures precise control in both analog and digital switching circuits.
This power MOSFET demonstrates exceptional versatility across various applications including:
- Industrial motor drives and inverters
- Automotive powertrain systems
- Renewable energy converters
- High-efficiency power supplies
Performance Advantages
The device's surface-mount D-PAK (TO-252) package combines compact form factor with excellent thermal dissipation characteristics. This packaging solution enables efficient heat transfer while maintaining compatibility with standard PCB assembly processes. The device's 197 MOhm typical resistance value ensures minimal leakage current in off-state conditions, contributing to improved system efficiency and reduced standby power consumption.
For design engineers, the STD80N240K6 offers significant advantages in circuit design flexibility. Its compatibility with standard 10V gate drive circuits simplifies integration with common control ICs, while its high avalanche energy rating provides inherent protection against voltage transients. The device's inherent reliability is further enhanced through advanced process technologies that minimize parameter drift over operating lifetime.
Tags: Power Management, Surface Mount Technology, Industrial Electronics, Automotive Components, Renewable Energy Systems