STMicroelectronics STD80N10F7 N-Channel MOSFET 100V 70A DPAK

STMicroelectronics STD80N10F7 N-Channel MOSFET 100V 70A DPAK

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Revolutionizing Power Management with STMicroelectronics STD80N10F7 N-Channel MOSFET

As the demand for high-efficiency power systems continues to grow across industries, STMicroelectronics has emerged as a trusted leader in semiconductor innovation. The STD80N10F7 N-Channel MOSFET represents the culmination of decades of expertise in power electronics, combining cutting-edge DeepGATE™ and STripFET™ VII technologies to deliver exceptional performance in 100V applications. This advanced power transistor sets new benchmarks for reliability, thermal management, and electrical efficiency in demanding environments.

Technical Excellence in Power Semiconductor Design

Engineered for high-current applications, this DPAK-packaged MOSFET demonstrates remarkable capabilities across critical performance metrics. With its 100V drain-source voltage rating and 70A continuous drain current capacity (at 25°C), the device maintains exceptional conductivity through its optimized 10mΩ on-resistance at 40A/10V operation. The device's gate charge characteristics (45nC @ 10V) and 3100pF input capacitance (at 50V) enable rapid switching while maintaining thermal stability in high-frequency operations.

ParameterValue
Max Voltage100V
Continuous Current70A
Rds(on) Max10mΩ
Gate Charge45nC
Operating Temp-55°C to 175°C
Advanced Features for Demanding Applications

The STMicroelectronics STD80N10F7 incorporates multiple design innovations that enhance its versatility across power systems. Its ±20V gate voltage rating provides robust protection against voltage spikes, while the 4.5V gate threshold voltage ensures compatibility with standard logic drivers. The device's DPAK surface-mount packaging (TO-252-3 format) combines excellent thermal dissipation with space-saving design, making it ideal for automotive electronics, industrial motor controls, and high-efficiency power supplies.

CharacteristicSpecification
Package TypeDPAK (Surface Mount)
Max Power Dissipation85W (Tc)
Operating Temperature-55°C to 175°C (TJ)
Industry-Leading Reliability and Performance

As an active product in STMicroelectronics' power semiconductor portfolio, the STD80N10F7 meets rigorous automotive and industrial standards through its advanced manufacturing processes. The device's optimized silicon design reduces conduction losses while maintaining exceptional thermal stability under load. Its tape-and-reel packaging format ensures seamless integration with modern SMT production lines, supporting high-volume manufacturing requirements.

Applications Across Power Electronics

This high-performance MOSFET finds applications in diverse power systems including:

  • Electric vehicle charging systems and battery management
  • High-efficiency DC-DC converters
  • Industrial motor drive inverters
  • Renewable energy system controllers
  • Telecom power supplies

Engineers designing next-generation power systems benefit from the device's combination of high current handling, low on-resistance, and robust thermal characteristics. When compared to similar devices in the 100V N-Channel MOSFET category, the STD80N10F7 delivers superior performance in critical areas like switching efficiency and thermal management.

Conclusion: Setting New Standards in Power Transistor Technology

The STMicroelectronics STD80N10F7 N-Channel MOSFET represents a significant advancement in power semiconductor technology. Its combination of DeepGATE™ and STripFET™ VII innovations, along with industry-leading specifications, make it an optimal choice for engineers seeking to maximize efficiency and reliability in high-power applications. Whether implementing this device in automotive electronics, industrial controls, or renewable energy systems, designers can trust in STMicroelectronics' proven track record of delivering cutting-edge power solutions that meet evolving market demands.

Tags: Power Electronics, MOSFET Transistors, STMicroelectronics Components, Industrial Power Supplies, High-Voltage MOSFETs

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