STMicroelectronics STD7NM60N MOSFET N-Channel 600V 5A DPAK - High-Performance Power Transistor
- Brand: STMicroelectronics
- Product Code: STD7NM60N
- Availability: In Stock
$0.29
- Ex Tax: $0.29
Introducing the STMicroelectronics STD7NM60N: A Benchmark in Power Efficiency
In the ever-evolving landscape of power electronics, the STMicroelectronics STD7NM60N emerges as a critical component for engineers seeking reliability and efficiency. This N-Channel MOSFET, engineered with STMicroelectronics' advanced MDmesh™ II technology, delivers exceptional performance in high-voltage applications. Designed for applications such as power supplies, motor control, and lighting systems, the STD7NM60N combines robust specifications with a compact DPAK package, making it a versatile choice for modern electronic designs.
Technical Excellence in Power Management
The STD7NM60N's core strengths lie in its technical specifications. With a drain-to-source voltage (VDSS) of 600V and a continuous drain current (ID) of 5A at 25°C, this MOSFET is optimized for high-voltage switching scenarios. Its RDS(on) of 900mΩ at 2.5A and 10V gate-source voltage ensures minimal conduction losses, while the gate charge (Qg) of 14nC at 10V enables rapid switching, reducing dynamic losses in high-frequency circuits.
| Parameter | Value |
|---|---|
| Drain to Source Voltage (VDSS) | 600 V |
| Continuous Drain Current (ID) | 5A (Tc) |
| RDS(on) (Max) | 900mΩ @ 2.5A, 10V |
| Gate Charge (Qg) | 14 nC @ 10 V |
| Operating Temperature | 150°C (TJ) |
Engineered for Real-World Applications
Beyond its technical prowess, the STD7NM60N's design addresses practical challenges in power systems. The ±25V gate-source voltage rating provides resilience against voltage spikes, ensuring longevity in demanding environments. Its thermal stability, with a power dissipation of 45W (Tc), allows operation in high-temperature conditions without derating. The DPAK surface-mount package balances thermal performance with space-saving design, ideal for applications like industrial motor drives, LED lighting systems, and consumer electronics.
By integrating STMicroelectronics' MDmesh™ II technology, the device minimizes on-state resistance while maintaining avalanche energy ratings, making it suitable for hard-switching applications. The 363pF input capacitance at 50V also supports efficient paralleling in high-current configurations, expanding its utility in power conversion systems.
Tags: Power Transistor, High Voltage MOSFET, STMicroelectronics Parts, Industrial Electronics, DPAK Components