STMicroelectronics STD7N90K5 MOSFET N-Channel 900V 7A DPAK

STMicroelectronics STD7N90K5 MOSFET N-Channel 900V 7A DPAK

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Revolutionizing Power Management with STMicroelectronics STD7N90K5 MOSFET

In the ever-evolving landscape of power electronics, the STMicroelectronics STD7N90K5 MOSFET emerges as a groundbreaking solution designed to meet the demands of high-voltage applications. This cutting-edge N-channel transistor combines robust performance metrics with advanced packaging technology, making it an indispensable component for engineers seeking reliability and efficiency in power management systems.

Key Features and Technical Excellence

Engineered with STMicroelectronics' proprietary MDmesh™ K5 technology, the STD7N90K5 delivers exceptional electrical characteristics. Operating at an impressive 900V drain-source voltage rating, this device maintains a continuous drain current capacity of 7A under standard thermal conditions. The surface-mount DPAK package not only optimizes thermal dissipation but also ensures compatibility with modern PCB assembly processes.

One of the standout characteristics of this MOSFET is its optimized gate charge profile, which significantly reduces switching losses in high-frequency applications. The ±30V gate-source voltage tolerance provides enhanced circuit design flexibility, while the integrated thermal protection features ensure stable operation across extreme temperature ranges (-55°C to 150°C).

ParameterValue
Max Voltage900 V
Continuous Current7A @ 25°C
Package TypeDPAK (TO-252-3)
Power Dissipation110W (Tc)
Applications and Performance Benefits

The STD7N90K5's versatility shines across various applications including industrial power supplies, motor control systems, and renewable energy inverters. Its advanced technology enables designers to create compact power solutions with improved energy efficiency, meeting modern regulatory requirements for reduced power consumption.

In switch-mode power supplies (SMPS), this MOSFET demonstrates superior performance through reduced conduction losses and enhanced thermal management. The device's inherent ruggedness against voltage spikes makes it particularly suitable for harsh industrial environments where reliability is paramount.

For design engineers, the component's standardized footprint and comprehensive datasheet documentation streamline the integration process. The tape-and-reel packaging format further enhances its appeal for automated manufacturing environments, offering both cost and time savings in production workflows.

Tags: Power MOSFET, N-channel transistor, High-voltage electronics, DPAK package, STMicroelectronics ICs

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