STMicroelectronics STD6N60M2 600V 4.5A N-Channel MOSFET

High-Performance Power Management with STMicroelectronics STD6N60M2

Engineered for demanding power electronics applications, the STMicroelectronics STD6N60M2 N-Channel MOSFET represents the cutting-edge MDmesh™ II Plus technology. This advanced component combines robust electrical specifications with thermal efficiency, delivering exceptional performance in switching applications across industrial, automotive, and consumer electronics sectors.

Technical Excellence in Power Semiconductor Design

Operating at a remarkable 600V rating while maintaining a continuous drain current of 4.5A, this DPAK-packaged MOSFET demonstrates STMicroelectronics' commitment to power density optimization. The device's 1.2Ohm Rds(on) at 10V drive voltage ensures minimal conduction losses, while its 8nC gate charge characteristic enables rapid switching transitions. These specifications translate to tangible benefits in power supply efficiency and thermal management for designers working on modern energy-conscious systems.

Key electrical characteristics include:

Broad Application Versatility

The STD6N60M2's comprehensive feature set makes it particularly well-suited for challenging environments. Its ±25V gate voltage rating provides enhanced reliability in transient conditions, while the 150°C maximum operating temperature ensures stable performance in thermally constrained designs. The TO-252-3 surface mount package facilitates efficient heat dissipation while maintaining compatibility with automated PCB assembly processes.

Key application areas include:

• Switching power supplies
• Motor control systems
• Industrial automation equipment
• Renewable energy inverters
• Automotive powertrain electronics

Advanced Thermal and Electrical Architecture

Developed using STMicroelectronics' proprietary MDmesh II Plus technology, this MOSFET features optimized silicon architecture that balances conduction and switching losses. The 232pF input capacitance at 100V Vds enables high-frequency operation while maintaining gate drive efficiency. With a 60W power dissipation rating and 4V gate threshold voltage, the device offers excellent control characteristics across its operating range.

Reliability and Compliance

Built to meet the highest industry standards, the STD6N60M2 operates reliably across extreme temperature ranges (-55°C to 150°C). Its RoHS-compliant DPAK packaging ensures environmental compliance while maintaining mechanical durability. The device's active status in STMicroelectronics' product roadmap guarantees long-term availability for production systems.

For designers seeking to optimize power conversion efficiency while maintaining component reliability, the STD6N60M2 represents a compelling solution that balances performance, robustness, and design flexibility. Its comprehensive specification set positions it as a preferred choice for next-generation power electronics applications requiring exceptional thermal management and electrical performance.

Tags: Power Semiconductors, Industrial Components, Electronic Design, Automotive Electronics, Power Management