STMicroelectronics STD5N62K3 DPAK MOSFET

Revolutionizing Power Electronics with STMicroelectronics STD5N62K3

In the ever-evolving landscape of power electronics, STMicroelectronics continues to set new benchmarks with its SuperMESH3™ series. The STD5N62K3 DPAK MOSFET exemplifies cutting-edge semiconductor technology, combining high-voltage capabilities with exceptional efficiency. This N-channel power MOSFET represents a perfect synergy between advanced engineering and practical design considerations, making it an ideal choice for demanding applications in industrial, automotive, and consumer electronics sectors.

Technical Excellence in Power Management

Operating at an impressive 620V drain-source voltage rating, the STD5N62K3 delivers reliable performance in high-voltage environments. Its 4.2A continuous drain current (at 25°C) ensures robust power handling capabilities while maintaining thermal stability. The device's 1.6Ω Rds(on) at 10V gate drive voltage significantly reduces conduction losses, translating to improved energy efficiency and reduced heat generation in power systems.

Engineered with STMicroelectronics' proprietary SuperMESH3 technology, this MOSFET features optimized switching characteristics that minimize both turn-on and turn-off losses. The 26nC gate charge at 10V drive voltage enables fast switching transitions, crucial for modern high-frequency power converters. With ±30V gate voltage rating and 4.5V threshold voltage (at 50µA), the device offers excellent gate control stability while maintaining compatibility with standard driver circuits.

Comprehensive Technical Specifications

Robust Design for Demanding Applications

Housed in a thermally efficient DPAK (TO-252-3) surface-mount package, the STD5N62K3 balances compact form factor with excellent thermal dissipation. The 680pF input capacitance (at 50V) ensures stable operation in high-speed switching applications while maintaining low electromagnetic interference (EMI). With 70W power dissipation capability (at case temperature), this MOSFET maintains performance integrity even under sustained high-load conditions.

The device's comprehensive protection features include advanced avalanche energy rating and short-circuit robustness. Its operating temperature range of -55°C to 150°C makes it suitable for extreme environmental conditions, while the 10V gate drive compatibility simplifies integration with standard PWM controllers.

Industry-Leading Performance

As part of STMicroelectronics' SuperMESH3 family, the STD5N62K3 demonstrates exceptional reliability and longevity. The device's advanced trench gate structure reduces specific on-resistance, enabling higher current density without compromising breakdown voltage. This technological advantage translates to smaller heatsink requirements and more compact power supply designs.

Manufacturers benefit from simplified thermal management solutions thanks to the device's inherent efficiency. The combination of high voltage capability and low conduction losses makes it particularly well-suited for power factor correction (PFC) circuits, DC-DC converters, and motor control applications in industrial automation systems.

Future-Proof Power Solution

The STD5N62K3's active product status ensures long-term availability and technical support. As industries transition to more energy-efficient systems, this MOSFET provides a reliable foundation for next-generation power electronics. Its compliance with modern environmental regulations and RoHS standards makes it a responsible choice for sustainable product development.

Whether designing consumer electronics, industrial machinery, or automotive power systems, engineers can trust the STD5N62K3 to deliver consistent performance with minimal design compromises. The device's combination of high voltage rating, efficient switching characteristics, and robust thermal management sets new standards for power semiconductor components in today's demanding applications.

Tags: Power Electronics, Surface Mount MOSFET, High Voltage Transistor, Industrial Power Components, Energy Efficient Semiconductor