STMicroelectronics STD45N10F7 N-Channel MOSFET 100V 45A DPAK
- Brand: STMicroelectronics
- Product Code: STD45N10F7
- Availability: In Stock
$0.50
- Ex Tax: $0.50
High-Performance STD45N10F7 MOSFET for Demanding Power Applications
STMicroelectronics' STD45N10F7 N-channel MOSFET represents a breakthrough in power semiconductor technology, combining advanced DeepGATE™ and STripFET™ VII innovations to deliver exceptional efficiency and reliability. This 100V, 45A DPAK packaged device is engineered for applications requiring minimal conduction losses, fast switching speeds, and robust thermal performance. Whether in automotive systems, industrial motor drives, or renewable energy inverters, the STD45N10F7 sets new standards for power density and operational stability.
Technical Excellence in Power Management
At the heart of the STD45N10F7's superior performance lies its industry-leading 18mΩ RDS(on) specification, measured at 22.5A and 10V gate-source voltage. This ultra-low on-state resistance dramatically reduces conduction losses, enabling cooler operation and higher system efficiency. The device's ±20V gate voltage tolerance ensures robustness against voltage spikes, while its 25nC gate charge optimizes switching performance for high-frequency applications.
Key technical specifications include:
| Parameter | Value |
|---|---|
| Max Drain-Source Voltage | 100V |
| Continuous Drain Current | 45A @25°C |
| Max Operating Temperature | 175°C |
Advanced Technology for Real-World Applications
The DeepGATE™ technology employed in this MOSFET enhances trench gate structure reliability, while STripFET™ VII's advanced silicon design minimizes switching losses. These technologies work in tandem to deliver 60W maximum power dissipation capability and 1640pF input capacitance, making it ideal for demanding environments like electric vehicle charging systems, photovoltaic inverters, and high-efficiency DC-DC converters. The device's surface mount DPAK package ensures excellent thermal management while maintaining compatibility with standard PCB assembly processes.
Design Flexibility and System Optimization
Engineers will appreciate the 4.5V gate threshold voltage (measured at 250µA), which enables compatibility with standard logic-level gate drivers while maintaining excellent switching characteristics. The device's 45A continuous drain current rating at 25°C ambient temperature provides ample headroom for high-power applications, and its -55°C to 175°C operating temperature range ensures reliable performance in extreme environments. The Tape & Reel packaging format simplifies automated assembly while maintaining component integrity during storage and handling.
Tags: Power Electronics, N-Channel MOSFET, Industrial Semiconductors, Automotive Components, Thermal Management