STMicroelectronics STD3NK90ZT4 SuperMESH™ N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STD3NK90ZT4
- Availability: In Stock
$0.30
- Ex Tax: $0.30
Revolutionizing Power Management with STMicroelectronics STD3NK90ZT4 SuperMESH™ MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its SuperMESH™ technology. The STD3NK90ZT4 N-Channel MOSFET exemplifies this innovation, delivering exceptional performance for high-voltage applications. Designed to optimize efficiency and reliability, this MOSFET is a cornerstone for engineers tackling demanding power management challenges in modern systems.
Key Technical Specifications
The STD3NK90ZT4 operates at a robust 900V drain-source voltage (Vdss), supporting continuous drain currents up to 3A under standard thermal conditions. Its advanced MOSFET architecture ensures minimal conduction losses, with a maximum Rds(on) of 4.8Ω at 1.5A and 10V gate-source voltage (Vgs). This low on-resistance translates to reduced power dissipation, making it ideal for applications where thermal performance is critical.
| Parameter | Value |
| Vdss | 900V |
| Id @ 25°C | 3A (Tc) |
| Rds(on) Max | 4.8Ω @ 1.5A, 10V |
| Gate Charge (Qg) | 22.7 nC @ 10V |
| Operating Temperature | -55°C to 150°C |
Beyond raw specifications, the device's ±30V gate-source voltage tolerance and 590pF input capacitance at 25V Vds provide design flexibility. The TO-252 (DPAK) surface-mount package further enhances its appeal for compact PCB layouts, while maintaining compatibility with automated assembly processes. These features collectively address the dual demands of miniaturization and robustness in contemporary electronics.
Engineers will appreciate the SuperMESH™ technology's contribution to superior switching characteristics. With a typical gate charge of 22.7nC at 10V, the device minimizes switching losses in high-frequency operations. This capability proves invaluable in applications like switched-mode power supplies (SMPS), motor drives, and lighting ballasts where efficiency directly impacts system performance and longevity.
The MOSFET's thermal resilience shines through its 90W maximum power dissipation rating at case temperature. This specification, combined with an operating temperature range spanning from -55°C to 150°C, ensures reliable performance across extreme environmental conditions. Whether deployed in industrial automation systems or consumer electronics, the device maintains consistent behavior under thermal stress.
STMicroelectronics' commitment to quality is evident in the device's construction. The TO-252-3 package format balances mechanical durability with optimal heat dissipation. Its lead configuration (2 leads + tab) simplifies thermal management in densely populated boards, while the SC-63 case standard ensures global manufacturing compatibility.
For design teams seeking to future-proof their projects, the STD3NK90ZT4 represents a strategic component choice. Its active product status signals ongoing manufacturer support, while the SuperMESH™ designation guarantees access to ST's proprietary silicon innovations. The device's availability in tape & reel packaging further facilitates high-volume production requirements, with standard pricing structures accommodating both prototyping and mass manufacturing phases.
Tags: Power Management, N-Channel MOSFET, Surface Mount, High Voltage, SuperMESH™ Technology