STMicroelectronics STD35P6LLF6 STripFET™ F6 P-Channel MOSFET 60V 35A
- Brand: STMicroelectronics
- Product Code: STD35P6LLF6
- Availability: In Stock
$0.45
- Ex Tax: $0.45
STMicroelectronics STD35P6LLF6: High-Performance P-Channel MOSFET for Demanding Power Applications
The STMicroelectronics STD35P6LLF6 is a cutting-edge P-Channel MOSFET engineered for high-efficiency power management systems. Designed with ST's advanced STripFET™ F6 technology, this transistor combines robust electrical characteristics with a compact DPAK surface-mount package, making it ideal for automotive, industrial, and consumer electronics applications requiring reliable performance under demanding conditions.
Key Technical Advantages
Operating at 60V with a continuous drain current of 35A, this MOSFET delivers exceptional power handling capabilities while maintaining minimal conduction losses through its industry-leading 28mΩ Rds(on) rating. The device's optimized gate charge (30nC @ 4.5V) and input capacitance (3780pF @ 25V) ensure fast switching performance, reducing energy losses in high-frequency applications. Its 2.5V gate threshold voltage enables efficient operation with standard logic-level drivers, while the ±20V gate-source voltage rating provides enhanced reliability in transient conditions.
Engineered for thermal stability, the transistor maintains 175°C operating junction temperature capability combined with 70W power dissipation (Tc), allowing deployment in high-temperature environments without performance derating. The TO-252-3 package with exposed tab facilitates efficient heat dissipation through standard PCB mounting techniques.
| Parameter | Specification |
|---|---|
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 35A @ 25°C |
| Rds(on) Max | 28mΩ @ 10V VGS |
| Gate Charge | 30nC @ 4.5V |
| Operating Temperature | 175°C (TJ) |
Design Flexibility and Application Scope
As a member of ST's STripFET™ F6 family, this transistor represents the sixth generation of STMicroelectronics' power MOSFET technology, offering improved efficiency and reduced on-resistance compared to previous generations. Its surface-mount DPAK configuration enables automated assembly while maintaining excellent thermal performance equivalent to through-hole components.
Typical applications include motor control circuits, power supply rectifiers, battery management systems, and automotive electronics where space constraints and thermal reliability are critical. The device's robust construction and 100% avalanche tested capability ensure long-term reliability in harsh operating environments.
Technical Excellence in Power Management
The STD35P6LLF6's combination of high current capability, low on-resistance, and fast switching characteristics makes it particularly suitable for synchronous rectification, DC-DC conversion, and load switching applications. Its optimized thermal resistance (RthJC = 1.7°C/W) allows designers to maximize power density while maintaining component longevity.
As part of STMicroelectronics' comprehensive power transistor portfolio, this MOSFET benefits from the company's decades of semiconductor expertise and commitment to quality standards. The device complies with RoHS and REACH environmental regulations, ensuring compatibility with modern green manufacturing processes.
Tags: Power Electronics, Surface Mount MOSFET, High Current Transistor, STripFET Technology, DPAK Package