STMicroelectronics STD2N105K5 N-Channel MOSFET 1050V 1.5A DPAK

High-Performance Power Management with STMicroelectronics MDmesh™ K5 Series MOSFETs

In the rapidly evolving world of power electronics, STMicroelectronics continues to lead with its MDmesh™ K5 series MOSFETs, specifically the STD2N105K5 model. This N-channel MOSFET combines cutting-edge technology with robust performance metrics, making it an ideal choice for engineers designing high-voltage applications. With a 1050V drain-source voltage rating and optimized for efficiency, this device addresses the growing demand for compact, reliable power solutions across industries.

Advanced Specifications for Demanding Applications

At the core of the STD2N105K5's capabilities is its ability to deliver 1.5A continuous drain current at 25°C, supported by an 8Ω maximum on-resistance (Rds(on)) at 750mA and 10V gate-source voltage. The device's ±30V gate-source voltage tolerance ensures durability in varying operational conditions, while its 10nC gate charge (Qg) at 10V enables fast switching performance. These specifications make it particularly suitable for applications requiring minimal conduction losses and efficient thermal management.

The STD2N105K5's TO-252-3 (DPAK) surface-mount package combines space-saving design with excellent thermal dissipation capabilities, rated for 60W maximum power dissipation (Tc). Operating temperature range from -55°C to 150°C (TJ) ensures reliability in extreme environments, whether deployed in industrial machinery, renewable energy systems, or advanced lighting solutions.

Design Advantages Across Industries

The versatility of the MDmesh™ K5 series shines in multiple sectors. In power supply units, its high voltage capability reduces component count while maintaining efficiency. Motor control systems benefit from its precise gate charge characteristics, enabling smoother operation. Lighting applications leverage the device's thermal stability to ensure consistent performance over extended periods. The DPAK packaging further enhances design flexibility by supporting automated assembly processes while maintaining excellent thermal performance.

Engineers appreciate the device's 5V gate threshold voltage (Vgs(th)) specification, which simplifies driver circuit design while maintaining compatibility with standard logic levels. The 115pF input capacitance (Ciss) at 100V ensures minimal impact on high-frequency switching performance, making it suitable for modern power architectures requiring compact magnetics.

Why Choose MDmesh™ K5?

STMicroelectronics' MDmesh™ technology represents a significant advancement in power MOSFET design. The K5 iteration introduces enhanced cell structure optimization that reduces both conduction and switching losses. This dual optimization makes the STD2N105K5 particularly effective in applications where energy efficiency and thermal management are critical. The device's active status in production ensures long-term supply stability for industrial customers, while its tape-and-reel packaging facilitates seamless integration into automated manufacturing workflows.

When compared to standard MOSFETs, the MDmesh™ K5 series demonstrates measurable improvements in key performance areas. Its combination of high-voltage capability with low on-resistance characteristics addresses the industry's push toward higher efficiency power conversion systems. Designers working on solar inverters, electric vehicle charging systems, or industrial motor drives will find this device particularly valuable for meeting modern energy efficiency standards.

Technical Excellence in Power Electronics

The STD2N105K5 exemplifies STMicroelectronics' commitment to innovation in power management. By maintaining strict parameter tolerances across production batches, the device ensures consistent performance across different applications. Its surface-mount design with DPAK packaging strikes an optimal balance between manual soldering accessibility and automated manufacturing compatibility. The device's 10V drive voltage specification aligns with industry-standard gate driver ICs, simplifying circuit design while ensuring reliable operation in high-stress environments.

Tags: Power Management, High Voltage MOSFET, Surface Mount Technology, Efficient Power Solutions, Industrial Electronics