STMicroelectronics STD13N60DM2 N-Channel MOSFET 600V 11A DPAK
- Brand: STMicroelectronics
- Product Code: STD13N60DM2
- Availability: In Stock
$0.56
- Ex Tax: $0.56
STMicroelectronics STD13N60DM2: High-Performance N-Channel MOSFET for Demanding Power Applications
Engineered for efficiency and reliability, the STMicroelectronics STD13N60DM2 N-Channel MOSFET stands as a testament to ST’s commitment to innovation in power electronics. This 600V, 11A DPAK packaged MOSFET is designed to meet the rigorous demands of modern power systems, offering exceptional thermal performance, low on-resistance, and robust operational characteristics. Whether you're working on industrial motor drives, automotive systems, or renewable energy solutions, the STD13N60DM2 delivers the performance needed to optimize your designs.
Key Features and Specifications
At the core of the STD13N60DM2’s appeal is its advanced MDmesh™ DM2 technology, which minimizes conduction losses while maintaining high breakdown voltage capabilities. With a drain-source voltage (VDSS) of 600V and a continuous drain current (ID) of 11A at 25°C, this MOSFET excels in high-voltage switching applications. Its ultra-low on-state resistance of 365mΩ at VGS = 10V ensures minimal power dissipation, making it ideal for energy-efficient systems. The device’s gate charge (Qg) of 19nC further enhances switching performance, reducing losses in high-frequency operations.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 600V |
| Continuous Drain Current (ID) | 11A |
| RDS(on) (Max) | 365mΩ @ 5.5A, 10V |
| Gate Charge (Qg) | 19nC @ 10V |
| Operating Temperature Range | -55°C to 150°C |
Applications and Use Cases
The versatility of the STD13N60DM2 makes it a preferred choice across a wide range of applications. In industrial settings, it powers variable speed motor drives, welding equipment, and switch-mode power supplies (SMPS). Its automotive-grade reliability suits electric vehicle (EV) charging systems, onboard chargers, and battery management solutions. Additionally, the MOSFET’s high efficiency aligns with renewable energy systems like solar inverters and wind turbines, where maximizing energy conversion is critical. The DPAK surface-mount package ensures compatibility with automated PCB assembly processes, reducing manufacturing complexity.
Thermal and Packaging Advantages
The DPAK (TO-252-3) package of the STD13N60DM2 combines compact form factor with excellent thermal dissipation. With a maximum power dissipation of 110W at TC, the device maintains stable performance under heavy loads. The package’s design facilitates efficient heat transfer to the PCB, minimizing the need for additional cooling mechanisms. This thermal efficiency not only extends the lifespan of the MOSFET but also enhances the reliability of the overall system. The tape-and-reel packaging (TR) ensures hassle-free bulk handling for volume production.
Why Choose the MDmesh™ DM2 Series?
STMicroelectronics’ MDmesh™ DM2 series represents a breakthrough in super-junction MOSFET technology. By optimizing the cell structure and reducing parasitic capacitance, the series achieves a perfect balance between conduction and switching losses. The STD13N60DM2 inherits these advantages, offering designers the flexibility to push the boundaries of power density and efficiency. Compared to conventional MOSFETs, the MDmesh™ DM2 devices exhibit lower EON and EOFF losses, enabling higher switching frequencies without compromising thermal stability.
Design Considerations and Best Practices
To fully leverage the capabilities of the STD13N60DM2, designers should consider several factors. First, ensure proper PCB layout to minimize parasitic inductance in the gate and source paths. Second, implement adequate gate drive strength to fully enhance the device, as the threshold voltage (VGS(th)) is specified at 5V maximum. Third, utilize the device’s ±25V gate-source voltage rating to maintain robustness against transient spikes. Finally, integrate thermal vias under the DPAK tab to enhance heat dissipation, ensuring long-term reliability in high-temperature environments.
Conclusion: A Reliable Workhorse for Power Electronics
The STMicroelectronics STD13N60DM2 N-Channel MOSFET is more than just a component—it’s a foundational element for building next-generation power systems. Its combination of high voltage capability, low on-resistance, and advanced packaging makes it a versatile solution for engineers seeking to optimize performance and efficiency. Whether you're designing industrial power supplies, automotive systems, or renewable energy inverters, the STD13N60DM2 provides the reliability and scalability needed to meet evolving industry standards. With its active product status and comprehensive datasheet support, this MOSFET is poised to remain a cornerstone of power electronics for years to come.
Tags: MOSFET, STMicroelectronics, DPAK, 600V, N-Channel