STMicroelectronics STD12NF06T4 N-Channel MOSFET 60V 12A DPAK
- Brand: STMicroelectronics
- Product Code: STD12NF06T4
- Availability: In Stock
$0.25
- Ex Tax: $0.25
High-Performance Power Solution with STMicroelectronics STD12NF06T4
STMicroelectronics continues to lead the semiconductor industry with its innovative STripFET™ II series, exemplified by the STD12NF06T4 N-Channel MOSFET. This high-performance power transistor combines robust electrical characteristics with advanced packaging technology, making it ideal for demanding automotive and industrial applications. Designed for efficiency and reliability, this 60V 12A DPAK MOSFET delivers exceptional performance in switching circuits, motor control systems, and power management solutions.
Key Technical Advantages
Engineered with STMicroelectronics' proprietary technology, the STD12NF06T4 features a remarkably low on-state resistance of 100mΩ at 6A and 10V gate-source voltage, minimizing power losses and thermal generation. The device's 60V drain-source voltage rating ensures safe operation in high-voltage environments, while its 12A continuous drain current capability supports high-power applications without compromising reliability.
The MOSFET's gate charge characteristics further enhance its performance profile, with a maximum gate charge of 12nC at 10V Vgs. This enables fast switching speeds while maintaining low gate drive requirements. The device's thermal stability is optimized through its DPAK surface-mount package, which provides excellent heat dissipation and mechanical durability.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 12A |
| On-State Resistance (Rds(on)) | 100mΩ @ 6A, 10V |
| Gate Charge (Qg) | 12nC @ 10V |
| Operating Temperature | -55°C to 175°C |
Industrial and Automotive Applications
The STD12NF06T4's robust design makes it particularly well-suited for automotive electronics, including engine control units, electric vehicle power systems, and industrial motor drives. Its wide operating temperature range (-55°C to 175°C) ensures reliable performance in harsh environments, while the ±20V gate-source voltage protection enhances device longevity in demanding conditions.
This MOSFET's surface-mount DPAK package (TO-252-3) offers significant advantages in modern PCB designs. The compact footprint and automated assembly compatibility make it ideal for high-density electronic systems requiring efficient thermal management. Applications in power supplies, battery management systems, and load switches benefit from its combination of high current capability and low conduction losses.
Reliability and Performance
STMicroelectronics' STripFET™ II technology provides this device with exceptional avalanche energy ratings and short-circuit withstand capability. The MOSFET's input capacitance of 315pF at 25V Vds ensures stable operation in high-frequency switching applications, while the 4V gate threshold voltage (at 250µA) enables precise control with standard logic-level drivers.
With a maximum power dissipation rating of 30W (Tc), the device maintains optimal performance under continuous operation. Its active product status and tape & reel packaging format facilitate seamless integration into automated manufacturing processes, making it a preferred choice for volume production in automotive and industrial sectors.
Tags: Power Transistor, N-Channel MOSFET, High Voltage, Industrial Electronics, Automotive Components