STMicroelectronics STD10P6F6 MOSFET P-Channel 60V 10A DPAK

STMicroelectronics STD10P6F6 MOSFET P-Channel 60V 10A DPAK

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High-Performance STMicroelectronics STD10P6F6 MOSFET for Advanced Power Applications

The STMicroelectronics STD10P6F6 is a cutting-edge P-Channel MOSFET engineered for high-efficiency power management systems. With its 60V drain-to-source voltage rating and 10A continuous drain current capacity, this DPAK-packaged transistor delivers exceptional performance in automotive, industrial, and consumer electronics applications. Designed with STMicroelectronics' DeepGATE™ and STripFET™ VI technologies, the device combines advanced silicon innovation with robust thermal management capabilities.

At the heart of its design, the STD10P6F6 features a maximum RDS(on) of 160mΩ at 5A and 10V VGS, ensuring minimal power loss during operation. The device's 4V gate threshold voltage (at 250µA) enables precise control while maintaining compatibility with standard logic circuits. With a compact DPAK surface-mount package (TO-252-3), this MOSFET offers optimal space savings without compromising on performance.

Technical Excellence in Power Transistor Design

Engineered for demanding environments, the STD10P6F6 demonstrates impressive electrical characteristics. Its 340pF input capacitance at 48V VDS and 6.4nC gate charge at 10V VGS contribute to rapid switching performance, reducing energy consumption in high-frequency applications. The device maintains ±20V gate-source voltage protection while delivering 35W maximum power dissipation at case temperature. Operating at junction temperatures up to 175°C, this transistor remains reliable in extreme thermal conditions.

Key electrical specifications include:

ParameterValue
Drain-Source Voltage60V
Continuous Drain Current10A @ 25°C
RDS(on) Max160mΩ @ 5A, 10V
Gate Charge6.4nC @ 10V
Input Capacitance340pF @ 48V
Applications and System Integration

This versatile MOSFET excels in various applications including motor control systems, power supply switching, battery management circuits, and industrial automation equipment. Its surface-mount design simplifies PCB integration while enabling automated assembly processes. The device's tape-and-reel packaging facilitates efficient manufacturing workflows. The combination of STMicroelectronics' proprietary technologies ensures superior conductivity and thermal performance in switching applications.

Engineers appreciate the transistor's compatibility with standard gate drivers and its ability to handle high current loads while maintaining low on-resistance. The device's operational stability across wide temperature ranges makes it suitable for challenging environments including automotive powertrains, industrial motor drives, and renewable energy systems.

Quality and Reliability

As part of STMicroelectronics' active product line, the STD10P6F6 undergoes rigorous quality testing to meet industry standards. The device's robust construction includes protection features that enhance system reliability. With its proven performance in demanding applications, this MOSFET represents a reliable choice for designers seeking efficient power switching solutions. The device's 35W power dissipation rating at case temperature ensures sustained operation under heavy loads, while the thermal shutdown protection maintains device integrity in extreme conditions.

Tags: MOSFET Transistor, Power Electronics, STMicroelectronics Components, Surface Mount Device, High Voltage Transistor

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