STMicroelectronics STD10LN80K5 MOSFET N-Channel 800V 8A DPAK
- Brand: STMicroelectronics
- Product Code: STD10LN80K5
- Availability: In Stock
$0.70
- Ex Tax: $0.70
Advanced Power Management with STMicroelectronics STD10LN80K5 MOSFET
The STMicroelectronics
STD10LN80K5
represents a breakthrough in power semiconductor technology, combining high-voltage capability with exceptional efficiency in a compact DPAK package. This N-Channel MOSFET is engineered for demanding applications requiring reliable performance in high-stress environments, featuring ST's proprietary MDmesh™ K5 technology that optimizes switching characteristics while maintaining robust thermal stability.Designed for modern power conversion systems, this 800V MOSFET delivers 8A continuous drain current with industry-leading efficiency metrics. The device's advanced trench gate structure minimizes on-resistance (Rds(on)) to just 630mΩ at 4A/10V operation, significantly reducing conduction losses in critical power stages. Its ±30V gate voltage tolerance ensures compatibility with standard driver circuits while maintaining protection against voltage spikes.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 800 V |
| Continuous Drain Current (Id) | 8A @ 25°C |
| Max Rds(on) | 630mΩ @ 4A, 10V |
| Gate Charge (Qg) | 15 nC @ 10V |
| Operating Temperature | -55°C to 150°C |
Engineered for high-frequency switching applications, the STD10LN80K5 demonstrates exceptional dynamic performance with just 15nC gate charge and 427pF input capacitance. These characteristics make it ideal for modern power supplies, motor control systems, and industrial automation equipment where efficiency and reliability are paramount. The DPAK (TO-252) surface mount package provides excellent thermal dissipation while maintaining compatibility with automated assembly processes.
This device excels in power factor correction (PFC) circuits and DC-DC converters, where its 110W power dissipation rating and 10V drive voltage optimization ensure stable operation under varying load conditions. The built-in thermal protection features enable robust performance in harsh environments, making it suitable for automotive electronics, renewable energy systems, and industrial motor drives.
As part of STMicroelectronics' MDmesh™ K5 series, this MOSFET incorporates advanced silicon technology that reduces switching losses by up to 30% compared to previous generations. The device's 5V gate threshold voltage (at 100µA) ensures precise control in both analog and digital power management circuits, while its RoHS-compliant packaging meets modern environmental standards.
Tags: STMicroelectronics, MOSFET, N-Channel, DPAK, 800V