STMicroelectronics STB60NF06T4 MOSFET N-Channel 60V 60A

STMicroelectronics STB60NF06T4 MOSFET N-Channel 60V 60A

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In today's rapidly evolving power electronics landscape, the STMicroelectronics STB60NF06T4 emerges as a high-performance solution for demanding applications requiring exceptional efficiency and reliability. This N-Channel MOSFET, part of STMicroelectronics' renowned STripFET™ II series, combines advanced silicon technology with robust packaging to deliver superior power management capabilities in industrial, automotive, and consumer electronics sectors.

Engineered for high-current applications, the STB60NF06T4 features a 60V drain-source voltage rating and 60A continuous drain current capacity, making it ideal for motor control systems, power supplies, and battery management circuits. Its ultra-low on-state resistance of just 16mΩ at 30A and 10V gate-source voltage minimizes conduction losses, enabling cooler operation and enhanced system efficiency. This device's optimized gate charge of 66nC at 10V further reduces switching losses, allowing for high-frequency operation in modern power conversion designs.

Technical Excellence in Power Semiconductor Design

The STB60NF06T4's advanced MOSFET architecture delivers exceptional thermal performance through its D2PAK surface-mount package. This TO-263AB compatible housing provides excellent heat dissipation characteristics while maintaining compatibility with standard PCB assembly processes. With a maximum power dissipation of 110W at case temperature and operating junction temperatures ranging from -65°C to 175°C, this transistor demonstrates remarkable resilience in extreme environmental conditions.

Key technical specifications include:

Parameter
Value

Drain-Source Voltage

60V

Continuous Drain Current

60A @ 25°C

RDS(on) Max

16mΩ @ 10V VGS

Gate Charge

66nC @ 10V

Operating Temperature

-65°C to 175°C

Industrial and Automotive Power Solutions

As a critical component in modern power electronics, the STB60NF06T4 excels in automotive applications such as electric vehicle powertrains, onboard chargers, and 48V mild hybrid systems. Its AEC-Q101 qualification ensures reliable performance in automotive environments, while the ±20V gate voltage tolerance provides design flexibility for protection circuits. In industrial settings, this MOSFET shines in motor drives, uninterruptible power supplies (UPS), and solar inverters where dependable switching performance is paramount.

The device's surface-mount D2PAK package offers significant advantages over traditional through-hole components. This space-saving design maintains excellent thermal performance through its exposed drain pad, while the tape-and-reel packaging format enables efficient automated assembly processes. With 4V gate threshold voltage at 250μA, the STB60NF06T4 ensures compatibility with standard logic-level gate drivers, simplifying circuit design while maintaining optimal performance.

Tags: Power MOSFET, High Voltage Transistor, STripFET II, Surface Mount Device, TO-263AB Package

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