STMicroelectronics STB36NF06LT4 N-Channel MOSFET 60V 30A D2PAK
- Brand: STMicroelectronics
- Product Code: STB36NF06LT4
- Availability: In Stock
$0.54
- Ex Tax: $0.54
High-Performance STripFET™ II MOSFET for Demanding Power Applications
STMicroelectronics' STB36NF06LT4 represents the second generation of their advanced STripFET™ MOSFET technology, delivering exceptional power efficiency and thermal performance in a compact surface-mount package. This N-channel power MOSFET combines high voltage capability with low on-resistance characteristics, making it an ideal choice for modern power management systems requiring reliable performance under demanding operating conditions.
Advanced Design for Optimal Efficiency
Engineered with cutting-edge trench gate technology, the STB36NF06LT4 achieves an impressive 40mΩ maximum on-resistance at 15A drain current with 10V gate-source voltage. This remarkable Rds(on) specification minimizes conduction losses, enabling higher system efficiency while maintaining robust thermal management. The device's ±18V gate voltage tolerance provides enhanced protection against voltage spikes, ensuring stable operation in challenging environments.
Comprehensive Technical Specifications
This TO-263AB packaged power transistor features a 60V drain-source voltage rating and can handle continuous drain currents up to 30A at 25°C. Its optimized gate charge characteristics (17nC max @ 5V Vgs) contribute to faster switching transitions, reducing switching losses in high-frequency applications. The device maintains reliable performance across extreme temperature ranges (-55°C to 175°C), making it suitable for both industrial and automotive environments.
Vdss | 60V |
Id @ 25°C | 30A |
Rds(on) Max | 40mΩ @ 10V Vgs |
Qg (Max) | 17nC @ 5V |
Ciss (Max) | 660pF @ 25V |
Robust Packaging and Thermal Performance
Housed in a thermally efficient D2PAK (TO-263-3) surface-mount package, this MOSFET combines 70W maximum power dissipation capability with space-saving design. The package's optimized thermal resistance (RthJC = 1.7°C/W) enables effective heat transfer to the PCB, maintaining device reliability even under full load conditions. The 2.5V maximum gate threshold voltage ensures compatibility with standard logic drivers while maintaining excellent switching characteristics.
Target Applications
The STB36NF06LT4's combination of high current capability and low on-resistance makes it particularly suitable for: DC-DC converters in industrial power supplies, motor control systems, battery management circuits, and automotive powertrain applications. Its AEC-Q101 qualification ensures automotive reliability standards compliance, while the tape-and-reel packaging format supports automated PCB assembly processes.
Reliable Performance in Demanding Environments
With its ruggedized design and advanced process technology, this MOSFET delivers consistent performance across extreme operating conditions. The device's 175°C maximum junction temperature rating provides ample thermal headroom for high-ambient temperature applications. Its 250µA gate threshold voltage stability ensures reliable operation across the entire temperature range while maintaining minimal leakage currents.
Tags: Power MOSFET, Surface Mount Transistor, STripFET Technology, Industrial Power Components, Automotive Electronics