STMicroelectronics STB28NM50N MOSFET - High-Performance N-Channel Power Transistor

Revolutionizing Power Management with STMicroelectronics STB28NM50N MOSFET

In the ever-evolving landscape of power electronics, the STMicroelectronics STB28NM50N MOSFET emerges as a groundbreaking solution for engineers seeking superior performance, reliability, and efficiency. This advanced N-channel power transistor combines cutting-edge MDmesh™ II technology with optimized electrical characteristics, making it an ideal choice for demanding applications in industrial, automotive, and consumer electronics sectors.

Technical Excellence in Power Semiconductor Design

Engineered to deliver exceptional power handling capabilities, the STB28NM50N features a robust 500V drain-source voltage rating paired with a continuous drain current capacity of 21A at 25°C. Its innovative design achieves a remarkably low Rds(on) of 158mΩ at 10.5A and 10V gate-source voltage, significantly reducing conduction losses and improving thermal performance. The device's advanced trench-gate structure enables fast switching characteristics with minimal gate charge (50nC @ 10V), making it particularly well-suited for high-frequency power conversion applications.

Key technical specifications include:

Optimized for Demanding Applications

The STB28NM50N's versatile design makes it an excellent choice for various power management applications. Its high-voltage capability and robust thermal performance shine in:

Industrial motor drives where precise control and energy efficiency are critical

Renewable energy systems requiring reliable power conversion

Automotive electronics demanding rugged performance under extreme conditions

Consumer electronics where space constraints favor surface-mount solutions

The device's D2PAK surface-mount package (TO-263AB) offers excellent thermal dissipation while maintaining compatibility with automated PCB assembly processes. Its ±25V gate-source voltage rating provides enhanced robustness against voltage transients, while the integrated protection features ensure reliable operation in harsh environments.

Advantages of MDmesh™ II Technology

At the heart of the STB28NM50N's exceptional performance lies STMicroelectronics' proprietary MDmesh™ II technology. This innovative approach combines advanced silicon processing with optimized device architecture to achieve:

• Reduced on-state resistance for improved energy efficiency

• Enhanced switching performance through minimized parasitic capacitances

• Superior thermal management capabilities

• Improved avalanche energy ratings for greater reliability

• Consistent performance across operating temperature ranges

Design Flexibility and System Integration

Engineers will appreciate the STB28NM50N's design versatility, which simplifies integration into various power topologies. The device's 4V gate threshold voltage enables compatibility with standard logic-level controllers while maintaining sufficient noise immunity. Its 1735pF input capacitance at 25V allows for efficient gate drive circuit design without compromising switching speed.

When designing with the STB28NM50N, system designers can leverage its:

• Surface-mount packaging for compact board layouts

• High power dissipation rating (150W Tc)

• Robust short-circuit withstand capability

• Temperature-stable electrical characteristics

• Compatibility with standard heat sinking solutions

Comprehensive Reliability and Compliance

Built to meet the rigorous demands of modern electronics, the STB28NM50N undergoes extensive quality testing to ensure:

• Industry-leading longevity in continuous operation

• Compliance with RoHS and REACH environmental standards

• Enhanced resistance to mechanical stress through optimized packaging

• Stable performance across the full operating temperature range (-55°C to 150°C)

• Robustness against humidity and thermal cycling

This comprehensive approach to reliability ensures minimal field failures and extended product lifespan, making the STB28NM50N an ideal choice for mission-critical applications where system downtime is unacceptable.

Conclusion: Elevating Power Electronics Performance

The STMicroelectronics STB28NM50N MOSFET represents the perfect balance between cutting-edge semiconductor technology and practical design considerations. By combining high-voltage capability, low on-resistance, and advanced packaging in a surface-mount form factor, this device empowers engineers to create more efficient, compact, and reliable power systems. Whether designing industrial power supplies, motor control systems, or automotive electronics, the STB28NM50N offers the performance characteristics needed to meet today's demanding design challenges while maintaining cost-effectiveness and ease of integration.

Tags: Power MOSFET, N-Channel Transistor, High-Voltage Semiconductor, Surface Mount Device, D2PAK Package