STMicroelectronics STB15N80K5 N-Channel MOSFET 800V 14A D2PAK
- Brand: STMicroelectronics
- Product Code: STB15N80K5
- Availability: In Stock
$1.39
- Ex Tax: $1.39
Advanced Power Management with STB15N80K5 N-Channel MOSFET
Engineered for high-voltage applications, the STB15N80K5 from STMicroelectronics represents the cutting-edge SuperMESH5™ technology, delivering exceptional performance in power switching systems. This N-Channel MOSFET combines robust electrical characteristics with advanced thermal management capabilities, making it an ideal choice for industrial power supplies, motor control systems, and renewable energy converters.
Technical Excellence in Power Semiconductor Design
Operating at 800V with a continuous drain current of 14A, this device features a remarkably low RDS(on) of 375mΩ at 10V gate-source voltage. The optimized gate charge (Qg) of 32nC ensures minimal switching losses while maintaining excellent conduction efficiency. Its ±30V gate voltage rating provides enhanced reliability in demanding environments where voltage transients are common.
| Parameter | Value |
|---|---|
| Max Voltage | 800V |
| Continuous Current | 14A |
| RDS(on) | 375mΩ @ 7A, 10V |
| Gate Charge | 32nC @ 10V |
| Operating Temp | -55°C to 150°C |
Optimized for Modern Power Electronics
The D²PAK surface mount package combines high thermal dissipation capability with space-saving design, enabling efficient heat management in compact PCB layouts. With 190W power dissipation rating and 1100pF input capacitance, this device maintains stable performance even under high-frequency switching conditions. The threshold voltage of 5V at 100µA ensures compatibility with standard logic-level drivers while minimizing control circuit complexity.
Key advantages include:
- SuperMESH5™ technology for reduced conduction losses
- High ruggedness in avalanche and commutation modes
- Lead-free and RoHS compliant packaging
Industrial and Automotive Applications
Designed for mission-critical systems, the STB15N80K5 excels in solar inverters, electric vehicle charging systems, and industrial motor drives. Its wide operating temperature range (-55°C to 150°C) ensures reliable performance in harsh environments. The device's robust construction and advanced thermal characteristics make it particularly suitable for applications requiring extended operational lifetimes and minimal maintenance.
Technical Specifications Summary
Beyond its electrical parameters, this MOSFET features advanced protection characteristics including built-in ESD protection up to 2kV. The TO-263AB package provides mechanical stability and excellent thermal coupling to PCBs. With a minimum order quantity of 1 and tape & reel packaging option, it offers flexible procurement for both prototyping and volume production requirements.
Tags: Power Electronics, Semiconductor Devices, High Voltage MOSFET, Industrial Components