STMicroelectronics STB100NF04T4 MOSFET - N-Channel 40V 120A D2PAK
- Brand: STMicroelectronics
- Product Code: STB100NF04T4
- Availability: In Stock
$0.68
- Ex Tax: $0.68
High-Performance STMicroelectronics STB100NF04T4 for Demanding Power Applications
The STMicroelectronics STB100NF04T4 N-Channel MOSFET represents a breakthrough in power transistor technology, combining exceptional electrical performance with robust automotive-grade reliability. Designed for high-current switching applications, this D2PAK packaged device delivers 120A continuous drain current capacity and 40V breakdown voltage while maintaining ultra-low on-resistance specifications. As part of ST's AEC-Q101 qualified STripFET™ II family, this component sets new benchmarks for efficiency and thermal management in modern power electronics systems.
Technical Excellence in Power MOSFET Design
At the heart of the STB100NF04T4's impressive performance lies its advanced MOSFET architecture, which achieves an industry-leading 4.6mΩ maximum on-resistance at 50A operating current. This exceptional conductivity characteristic minimizes conduction losses, enabling higher system efficiency in critical applications. The device's 10V gate drive optimization ensures compatibility with standard control circuits while maintaining fast switching characteristics through its 150nC gate charge specification.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 40V |
| Continuous Drain Current | 120A |
| On-Resistance (Max) | 4.6mΩ |
| Gate Charge | 150nC |
| Operating Temperature | -55°C to 175°C |
Built for Automotive Reliability
Meeting the rigorous demands of automotive electronics, the STB100NF04T4 carries AEC-Q101 qualification, ensuring reliable operation in extreme temperature environments and high-vibration conditions. Its D2PAK surface-mount package combines mechanical durability with excellent thermal dissipation characteristics, enabling 300W power dissipation capacity at case temperatures. The ±20V gate-source voltage rating provides additional design flexibility while maintaining robust short-circuit protection.
Engineers will appreciate the device's 250µA threshold voltage specification (4V max) which ensures stable operation across varying load conditions. The integrated design simplifies PCB layout with its TO-263AB footprint while maintaining industry-standard pin configurations. With 5100pF input capacitance at 25V, the MOSFET balances switching speed with stability in high-frequency applications.
Tags: Power Electronics, Automotive Components, MOSFET Technology, Surface Mount Devices, High Current Transistors