STMicroelectronics 1N5822 Schottky Diode | 40V 3A DO-201AD Diode

STMicroelectronics 1N5822 Schottky Diode: High-Performance Power Electronics Solution

The STMicroelectronics 1N5822 Schottky Diode represents a pinnacle in semiconductor technology, engineered to deliver exceptional performance in power conversion and rectification applications. Designed for demanding environments, this axial-lead diode combines robust specifications with reliable operation, making it an essential component for modern electronic systems requiring efficiency and durability. With its 40V reverse voltage rating and 3A average rectified current capacity, this device excels in applications ranging from switching power supplies to automotive electronics, where rapid recovery times and minimal power loss are critical requirements.

Technical Excellence in Diode Design

At the heart of this diode's superior performance lies its advanced Schottky barrier construction, which enables fast switching characteristics and reduced forward voltage drop. Operating at a maximum forward voltage of just 525mV @ 3A, the 1N5822 minimizes conduction losses while maintaining excellent thermal stability. The device's through-hole mounting configuration and DO-201AD package ensure reliable mechanical support and efficient heat dissipation, crucial for maintaining performance in high-current applications.

Applications and Implementation

Engineers and designers will find this diode particularly valuable in a wide range of power electronics applications. Its fast recovery characteristics (<500ns) make it ideal for DC-DC converters, freewheeling circuits, and reverse polarity protection systems. The device's ability to handle 3A continuous current while maintaining minimal voltage drop positions it as a preferred solution for battery charging circuits, solar inverters, and motor drive systems. When implementing in circuit designs, particular attention should be paid to proper heatsinking and current limiting to maximize device longevity.

Quality and Reliability

As part of STMicroelectronics' extensive power semiconductor portfolio, the 1N5822 undergoes rigorous quality assurance processes to ensure compliance with industry standards. The device maintains operational stability across its entire temperature range, with a maximum junction temperature rating of 150°C. This thermal resilience, combined with the manufacturer's proven fabrication techniques, ensures long-term reliability in both industrial and consumer electronics applications.

Design Considerations

For optimal performance, designers should consider the following implementation guidelines: maintain adequate spacing between adjacent components to prevent thermal buildup, use proper PCB trace widths to handle rated currents, and implement appropriate filtering in high-frequency applications. The device's reverse leakage current characteristic (2mA @ 40V) should be factored into standby power calculations, particularly in battery-powered systems where energy efficiency is paramount.

Tags: Schottky Diode, Fast Recovery Diode, DO-201AD Package, 40V Diode, Through Hole Diode