STMicroelectronics STP80NF55-06 N-Channel MOSFET - 55V 80A TO-220AB
- Brand: STMicroelectronics
- Product Code: STP80NF55-06
- Availability: In Stock
$0.85
- Ex Tax: $0.85
High-Performance STP80NF55-06 N-Channel MOSFET for Demanding Power Applications
Engineered for exceptional efficiency and reliability, the STP80NF55-06 from STMicroelectronics represents the cutting edge of power transistor technology. This N-channel MOSFET combines advanced STripFET™ II technology with robust TO-220AB packaging to deliver uncompromising performance in high-current switching applications. With its remarkable 80A continuous drain current capability and optimized 55V voltage rating, this component sets new standards for power density and thermal management in industrial electronics.
Technical Excellence in Power Management
The STP80NF55-06 leverages STMicroelectronics' proprietary Power MOSFET design to achieve an impressive 6.5mΩ maximum RDS(on) at 40A, significantly reducing conduction losses in critical power conversion circuits. The device's optimized gate charge characteristic of 189nC at 10V enables fast switching transitions while maintaining excellent thermal stability. Its ±20V gate voltage tolerance provides enhanced design flexibility and protection against transient voltage conditions.
| Parameter | Specification |
|---|---|
| Drain-Source Voltage | 55V |
| Continuous Drain Current | 80A @ 25°C |
| RDS(on) | 6.5mΩ @ 10V VGS |
| Gate Charge | 189nC |
| Operating Temperature | -55°C to 175°C |
Industrial-Grade Reliability
Manufactured to meet stringent industrial requirements, this MOSFET features a rugged TO-220AB package that ensures excellent thermal dissipation in demanding environments. The device's 300W maximum power dissipation rating (at case temperature) enables reliable operation in high-power applications without excessive derating. Its 4V gate threshold voltage (at 250µA) guarantees stable switching performance across the full operating temperature range from -55°C to 175°C.
Designed with STMicroelectronics' proven STripFET™ II technology, the STP80NF55-06 delivers superior avalanche energy ratings and short-circuit withstand capabilities compared to conventional power MOSFETs. The integrated monolithic design eliminates wire bonding for enhanced mechanical stability and reduced parasitic inductance, making it ideal for high-frequency switching applications in power supplies, motor drives, and industrial automation equipment.
Applications and Design Flexibility
This versatile power transistor excels in a wide range of applications including: switch-mode power supplies (SMPS), DC-DC converters, motor control systems, battery management circuits, and industrial automation equipment. The through-hole TO-220 package simplifies PCB mounting while providing excellent mechanical stability in vibration-prone environments.
Engineers will appreciate the device's compatibility with standard 10V gate drive circuits, eliminating the need for specialized driver circuitry. The low input capacitance of 4400pF at 25V further enhances switching performance by reducing driver power requirements. With its 250µA gate threshold current and ±20V gate voltage rating, the STP80NF55-06 offers exceptional design flexibility while maintaining robust short-circuit protection.
Tags: Power Transistor, High Current MOSFET, TO-220 Package, Voltage Regulation, Industrial Electronics