STB20N95K5 N-Channel MOSFET 950V 17.5A D2PAK

STB20N95K5 MOSFET: The Ultimate Solution for High-Voltage Power Applications

Engineered with cutting-edge SuperMESH5™ technology, the STB20N95K5 N-Channel MOSFET represents STMicroelectronics' commitment to revolutionizing power management solutions. This advanced transistor combines exceptional electrical performance with robust thermal characteristics, making it an ideal choice for demanding industrial and automotive applications where reliability meets efficiency.

Advanced Semiconductor Architecture

At the heart of this device lies a sophisticated MOSFET structure optimized for high-voltage operations. With a remarkable 950V drain-source voltage rating and 17.5A continuous drain current capability, this component outperforms conventional power transistors in both switching efficiency and thermal management. The patented SuperMESH5™ technology significantly reduces specific on-resistance (Rds(on)) to just 330mΩ at 10V gate-source voltage, while maintaining exceptional avalanche ruggedness.

This D2PAK packaged device (TO-263-3 format) features surface mount technology for superior heat dissipation. The optimized thermal design allows operation in extreme environments (-55°C to 150°C) while maintaining 250W power dissipation capacity. The ±30V gate-source voltage tolerance provides enhanced protection against voltage spikes, ensuring long-term reliability in challenging conditions.

Industrial-Grade Performance

The STB20N95K5 excels in high-stress applications such as industrial motor drives, renewable energy systems, and electric vehicle charging infrastructure. Its 100µA threshold voltage of 5V enables efficient operation with standard logic-level controllers. The 1500pF input capacitance at 100V Vds ensures fast switching transitions while minimizing switching losses, making it perfect for high-frequency power conversion circuits.

Key advantages include:

• Enhanced energy efficiency through reduced conduction losses
• Superior thermal stability in high-temperature environments
• Robust short-circuit withstand capability
• Space-saving D2PAK package with enhanced power density

This transistor's tape & reel packaging format facilitates automated assembly processes, while its active production status ensures long-term supply stability for critical applications. The device complies with industry-standard footprint requirements while offering performance characteristics typically found in more expensive power modules.

Technical Excellence in Power Electronics

The STB20N95K5 represents a perfect balance between electrical performance and mechanical durability. Its optimized die design reduces switching losses by up to 30% compared to previous generation devices, directly translating to improved system efficiency and reduced cooling requirements. The advanced packaging technology maintains industry-leading thermal resistance (Rth) values, ensuring reliable operation even under maximum load conditions.

Designers will appreciate the device's versatility across various topologies including:

• Hard-switched and resonant converters
• MOSFET-only and hybrid IGBT circuits
• High-voltage DC-DC and DC-AC inverters

When integrated into modern power systems, this transistor enables:

• Higher switching frequencies for smaller magnetic components
• Reduced system losses through optimized Rds(on)
• Enhanced reliability through superior avalanche energy ratings

For engineers seeking the perfect combination of performance, reliability, and cost-effectiveness in high-voltage power applications, the STB20N95K5 stands out as the clear choice. Its comprehensive feature set and proven performance make it an essential component for next-generation power electronics designs.

Tags: Power Electronics, Industrial Motor Drives, Energy-Efficient Switching