STM STD5NM50T4 N-Channel MOSFET 500V 7.5A DPAK | STMicroelectronics

STM STD5NM50T4 N-Channel MOSFET 500V 7.5A DPAK | STMicroelectronics

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High-Performance Power MOSFET for Demanding Applications

STMicroelectronics continues to set industry benchmarks with its

MDmesh™ series
of power MOSFETs, and the STD5NM50T4 exemplifies cutting-edge engineering for high-voltage applications. This N-Channel MOSFET combines robust 500V breakdown voltage capabilities with optimized conduction losses, making it ideal for industrial power supplies, motor control systems, and renewable energy inverters.

Engineered with MOSFET (Metal Oxide) technology, the STD5NM50T4 delivers exceptional thermal stability through its surface-mount DPAK package. The device maintains reliable operation across extreme temperatures (-55°C to 150°C), ensuring performance consistency in harsh environments. With a 100W (Tc) power dissipation rating and ±30V gate-source voltage tolerance, this component provides critical safeguards for high-stress circuits.

Technical Excellence in Compact Packaging

The DPAK (TO-252-3) surface-mount package integrates advanced thermal management features while maintaining compatibility with automated assembly processes. This package configuration supports the device's 7.5A (Tc) continuous drain current rating at 25°C, with minimal thermal resistance between junction and case. Designers benefit from reduced board space requirements without compromising power handling capabilities.

Key performance metrics include:

Rds(on) (Max)800mΩ @ 2.5A, 10V
Gate Charge (Qg)13 nC @ 10 V
Input Capacitance415 pF @ 25 V

Optimized for Modern Power Electronics

The STD5NM50T4 features a carefully balanced combination of electrical characteristics that make it particularly suitable for switch-mode power supplies (SMPS), DC-DC converters, and battery management systems. Its 5V @ 250µA gate threshold voltage enables efficient drive with standard logic-level controllers, while maintaining excellent switching performance at 10V drive voltage.

This MOSFET's 500 V drain-source rating provides ample headroom for applications in solar inverters and motor drives where voltage spikes are common. The device's 13 nC gate charge specification contributes to reduced switching losses, making it an excellent choice for high-frequency operation in modern power architectures.

Industrial-Grade Reliability

STMicroelectronics' MDmesh™ technology ensures superior avalanche ruggedness and repetitive stress endurance. The device's 415 pF input capacitance at 25 V bias optimizes high-speed switching performance while maintaining stability in parallel configurations. With its ±30V gate-source voltage rating, the STD5NM50T4 offers enhanced protection against transient voltages that could otherwise damage sensitive components.

Manufacturers appreciate the Tape & Reel (TR) packaging format that streamlines automated PCB assembly processes. Although marked as obsolete, this component remains widely used in industrial repair markets and legacy systems requiring proven reliability in critical power control applications.

Applications and Design Considerations

Typical applications include:

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Solar inverters
  • High-voltage DC-DC converters
  • Industrial automation systems

Designers should consider implementing proper thermal vias in the PCB layout to maximize the DPAK package's heat dissipation capabilities. While operating in the specified -55°C to 150°C range, derating of current capabilities may be required at elevated ambient temperatures to maintain reliability.

Tags: Power MOSFETs, N-Channel Transistors, High Voltage FETs, Surface Mount Devices, Industrial Electronics

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