STM STD3NK80ZT4 MOSFET N-Channel 800V 2.5A DPAK
- Brand: STMicroelectronics
- Product Code: STD3NK80ZT4
- Availability: In Stock
$0.26
- Ex Tax: $0.26
Revolutionizing Power Electronics: The STM STD3NK80ZT4 MOSFET
In today's rapidly evolving electronics landscape, engineers face unprecedented demands for compact, efficient, and reliable power solutions. The STM STD3NK80ZT4 MOSFET emerges as a critical component for modern applications requiring high-voltage switching capabilities with exceptional thermal performance. This advanced N-channel power transistor combines STMicroelectronics' proprietary SuperMESH™ technology with surface-mount design to deliver superior performance in demanding environments.
Key Technical Advantages
Engineered for precision power control, this 800V MOSFET offers a remarkable balance of electrical characteristics and robust packaging. Its DPAK surface-mount configuration enables seamless integration into high-density PCB designs while maintaining excellent thermal dissipation properties. The device's 4.5Ω Rds(on) at 10V gate drive ensures minimal conduction losses, making it particularly suitable for power conversion applications where efficiency matters most.
| Parameter | Value |
|---|---|
| Max Drain-Source Voltage | 800V |
| Continuous Drain Current | 2.5A (Tc) |
| Rds(on) @ 10V Vgs | 4.5Ω (max) |
| Gate Charge | 19nC (max) |
| Operating Temperature | -55°C to 150°C |
Design Excellence in Action
The STD3NK80ZT4 showcases STMicroelectronics' commitment to power semiconductor innovation through its advanced packaging technology. The TO-252-3 (DPAK) format provides mechanical stability while optimizing thermal transfer to the PCB, crucial for maintaining reliability in high-power scenarios. This design philosophy enables engineers to push the boundaries of power density in applications ranging from industrial motor drives to renewable energy systems.
Performance Characteristics
Operating at the intersection of speed and efficiency, this MOSFET demonstrates exceptional dynamic performance. With a maximum gate charge of 19nC at 10V Vgs, it enables fast switching transitions while maintaining low switching losses. The device's ±30V gate voltage tolerance provides design flexibility, accommodating various drive circuit configurations while ensuring robust operation across diverse environmental conditions.
The 485pF input capacitance at 25V Vds contributes to stable operation in high-frequency applications, making it ideal for modern power topologies like LLC resonant converters and synchronous rectifiers. Its 70W power dissipation rating (Tc) ensures reliable performance even in thermally challenging environments, while the wide operating temperature range (-55°C to 150°C) makes it suitable for both industrial and automotive applications.
Application Versatility
This versatile power transistor finds applications across multiple industries. In power supplies, it serves as an excellent choice for primary switching in AC-DC converters. Its high-voltage capability makes it ideal for motor control systems requiring robustness against voltage spikes. The device also excels in battery management systems for energy storage applications, where precise control of charge/discharge cycles is critical.
Comparative Advantage
When compared to competing solutions in the 800V N-channel MOSFET category, the STD3NK80ZT4 stands out through its combination of low on-resistance, compact footprint, and superior thermal management. Its SuperMESH™ technology implementation delivers better performance-to-cost ratios than traditional planar MOSFET structures, particularly in applications requiring high switching frequencies and minimal conduction losses.
Implementation Considerations
For optimal performance, designers should consider thermal vias in the PCB layout to maximize heat dissipation through the DPAK package's thermal tab. The device's gate threshold voltage of 4.5V requires proper gate drive circuitry to ensure full enhancement while maintaining switching efficiency. Implementing proper snubber circuits can help protect against voltage transients in inductive load applications.
Future-Proof Power Solutions
As industries continue their digital transformation journey, the demand for compact, efficient power components will only grow. The STM STD3NK80ZT4 represents a forward-looking solution that meets current design requirements while providing headroom for future system upgrades. Its compatibility with automated assembly processes and RoHS compliance make it an ideal choice for manufacturers seeking both technical and regulatory advantages in global markets.
Tags: Power Electronics, MOSFET Devices, Surface Mount Technology, High Voltage Transistors, Industrial Components