STM STD18N55M5 MOSFET N-Channel 550V 16A DPAK
- Brand: STMicroelectronics
- Product Code: STD18N55M5
- Availability: In Stock
$0.94
- Ex Tax: $0.94
Revolutionizing Power Management with STMicroelectronics' STD18N55M5 MOSFET
STMicroelectronics continues to set industry benchmarks with its MDmesh™ V series, and the STD18N55M5 MOSFET exemplifies cutting-edge power semiconductor technology. This N-Channel Power MOSFET combines exceptional electrical performance with robust thermal management, making it an ideal solution for modern power conversion systems requiring reliability and efficiency in compact designs.
Advanced Technical Specifications
Engineered for high-voltage applications, this device features a 550V drain-source rating while maintaining an impressively low on-resistance of 192mΩ at 8A current flow. The optimized gate charge of 31nC at 10V drive voltage enables fast switching transitions, reducing energy losses in power circuits. With a maximum operating temperature of 150°C and surface-mount DPAK packaging, the STD18N55M5 balances thermal performance with space-saving design requirements.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 550V |
| Continuous Drain Current | 16A |
| On-Resistance | 192mΩ |
| Gate Charge | 31nC |
| Operating Temperature | 150°C |
Performance-Driven Design
The MDmesh™ V technology breakthrough delivers superior avalanche energy ratings and enhanced switching characteristics. This MOSFET's advanced trench-gate structure minimizes conduction losses while maintaining excellent short-circuit withstand capability. The device's 1260pF input capacitance at 100V operation ensures stable performance in high-frequency applications, making it suitable for demanding environments like industrial motor drives and renewable energy systems.
Engineers benefit from the device's ±25V gate voltage tolerance, providing design flexibility while maintaining reliability. The 5V threshold voltage at 250µA ensures compatibility with standard logic-level drivers, simplifying circuit design in power supply applications. With 110W maximum power dissipation capability, the STD18N55M5 excels in high-power density designs requiring efficient thermal management.
Industrial Applications
This versatile MOSFET finds application in a wide range of power systems, including:
- Switching power supplies and DC-DC converters
- Motor control and drive systems
- Solar inverters and energy storage systems
- Industrial automation equipment
- Electric vehicle charging infrastructure
The TO-252-3 package with reinforced insulation meets industry safety standards while enabling automated PCB assembly processes. Its RoHS-compliant construction ensures environmental regulatory compliance without compromising performance.
Technical Advantages
Compared to conventional power transistors, the STD18N55M5 demonstrates significant improvements in key performance metrics. Its optimized Rds(on) × Qg figure-of-merit reduces total system losses by up to 25% in typical applications. The device's enhanced body diode characteristics improve reliability in freewheeling operations common in inductive load switching.
Designers appreciate the consistent parameter tolerances across production batches, ensuring predictable performance in volume manufacturing. The device's avalanche ruggedness rating provides added confidence in applications subject to voltage transients, reducing field failure rates and improving system longevity.
Tags: Power Electronics, Industrial Semiconductors, Energy Efficiency Components, High Voltage MOSFETs, Industrial Automation Components