STM STD11NM50N N-Channel MOSFET 500V 8.5A DPAK
- Brand: STMicroelectronics
- Product Code: STD11NM50N
- Availability: In Stock
$0.48
- Ex Tax: $0.48
High-Performance Power MOSFET for Demanding Applications
STMicroelectronics' STD11NM50N represents the cutting-edge MDmesh™ II series of N-channel power MOSFETs, engineered to deliver exceptional performance in high-voltage switching applications. This advanced component combines innovative technology with robust design to address the evolving needs of modern power electronics systems, offering engineers reliable performance and design flexibility.
Advanced Technical Specifications
Rated for 500V operation with a continuous drain current capacity of 8.5A at 25°C, the STD11NM50N demonstrates impressive power handling capabilities. Its optimized Rds(on) of 470mΩ at 4.5A and 10V gate drive ensures minimal conduction losses, while the 19nC gate charge at 10V enables fast switching transitions. The device's ±25V gate voltage rating and 4V gate threshold voltage (at 250µA) provide enhanced control stability across various operating conditions.
| Parameter | Value |
|---|---|
| Max Voltage | 500V |
| Continuous Current | 8.5A |
| Rds(on) | 470mΩ |
| Gate Charge | 19nC |
Design and Packaging Excellence
Housed in a compact DPAK (TO-252-3) surface mount package, this power MOSFET achieves an optimal balance between thermal performance and space efficiency. The 547pF input capacitance at 50V and 150°C maximum operating temperature rating ensure reliable performance in demanding environments. Its tape & reel packaging format supports automated manufacturing processes while maintaining component integrity.
As part of STMicroelectronics' MDmesh™ II technology platform, the STD11NM50N incorporates proprietary advancements in die design and packaging that significantly reduce on-resistance while maintaining excellent switching characteristics. This makes it particularly suitable for power factor correction circuits, DC-DC converters, and industrial motor control applications where efficiency and reliability are paramount.
The device's 70W power dissipation capability (at case temperature) enables operation in high-power scenarios while maintaining thermal stability. Its comprehensive protection features include advanced avalanche energy ratings and optimized short-circuit withstand capability, making it a dependable choice for critical power systems.
Application Versatility
This versatile power MOSFET finds application across multiple industries including renewable energy systems, electric vehicle charging infrastructure, industrial automation equipment, and high-efficiency power supplies. The combination of high voltage capability, robust current handling, and efficient thermal management makes it ideal for bridge configurations and high-side switching applications.
When designing with the STD11NM50N, engineers benefit from its compatibility with standard gate drive circuits, simplified thermal management requirements, and proven reliability in extended operation. The device's performance characteristics make it particularly well-suited for applications requiring high-frequency switching while maintaining low conduction losses.
Tags: Power Electronics, MOSFET Technology, Industrial Components, Electrical Engineering, Semiconductor Devices