STB17N80K5 MOSFET N-Channel 800V 14A D²PAK
- Brand: STMicroelectronics
- Product Code: STB17N80K5
- Availability: In Stock
$0.70
- Ex Tax: $0.70
STB17N80K5: High-Performance N-Channel MOSFET for Demanding Power Applications
STMicroelectronics' STB17N80K5 represents the cutting-edge MDmesh™ K5 technology, delivering exceptional performance in high-voltage power management systems. This advanced N-channel MOSFET combines robust electrical characteristics with a compact D²PAK surface-mount package, making it ideal for modern power conversion solutions requiring both efficiency and reliability.
Key Features and Technical Excellence
Operating at 800V with a continuous drain current capacity of 14A, the STB17N80K5 excels in challenging environments where voltage spikes and thermal stress are common. Its optimized RDS(on) of just 340mΩ at 7A and 10V gate drive ensures minimal conduction losses, while the advanced gate charge management (26nC @ 10V) reduces switching losses in high-frequency applications. The device's ±30V gate voltage tolerance provides exceptional robustness against transient conditions.
This power MOSFET employs ST's proprietary MDmesh™ K5 technology, which achieves an unprecedented balance between conduction and switching performance. The device's 866pF input capacitance (at 100V VDS) and 5V gate threshold voltage (at 250µA) enable efficient operation in both hard-switching and resonant topologies. With 170W maximum power dissipation capability and a wide operating temperature range (-55°C to 150°C), it maintains performance stability in extreme environments.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 800V |
| Continuous Drain Current | 14A |
| RDS(on) | 340mΩ |
| Gate Charge | 26nC |
| Package Type | D²PAK (TO-263) |
Applications and System Benefits
The STB17N80K5's versatile design makes it suitable for various power electronics applications including industrial motor drives, renewable energy systems, and high-voltage DC-DC converters. Its surface-mount D²PAK package combines the thermal advantages of through-hole components with the space-saving benefits of modern SMT assembly. Engineers can achieve higher power density designs while maintaining excellent thermal management through the device's optimized package design.
Key advantages include:
- Enhanced energy efficiency through reduced conduction/switching losses
- Improved system reliability with built-in overvoltage protection
- Compact form factor enabling space-constrained designs
- Excellent thermal performance for demanding environments
- Compatibility with standard gate drive circuits
This device particularly excels in applications requiring high avalanche energy ratings and repetitive stress endurance. Its advanced technology foundation ensures long-term reliability in critical systems like uninterruptible power supplies (UPS), welding equipment, and induction heating systems.
Tags: Power Electronics, Voltage Converters, Industrial Semiconductors, Surface Mount Devices, High Voltage Transistors