STMicroelectronics STL3NM60N MOSFET - 600V N-Channel PowerFlat MOSFET
- Brand: STMicroelectronics
- Product Code: STL3NM60N
- Availability: In Stock
$0.50
- Ex Tax: $0.50
STMicroelectronics STL3NM60N: High-Performance Power MOSFET for Demanding Applications
The STL3NM60N from STMicroelectronics represents a significant advancement in power MOSFET technology, combining robust performance characteristics with compact packaging. This N-channel MOSFET operates at a remarkable 600V rating while maintaining exceptional efficiency through its optimized on-resistance and thermal management capabilities. As part of STMicroelectronics' MDmesh™ II series, this device embodies the company's commitment to delivering cutting-edge power solutions for modern electronic systems.
Key Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 600 V |
| Continuous Drain Current | 650mA (Ta), 2.2A (Tc) |
| On-Resistance (Rds(on)) | 1.8Ω @ 1A, 10V Vgs |
| Gate Charge (Qg) | 9.5 nC @ 10V |
| Operating Temperature | -55°C to 150°C |
Engineered for efficiency, the STL3NM60N features a PowerFlat™ (3.3x3.3) package that dramatically reduces thermal resistance while maintaining a compact footprint. This 8-PowerVDFN surface-mount device combines exceptional power dissipation capabilities (22W at Tc) with space-saving design, making it ideal for applications where thermal performance and board space optimization are critical.
Advanced Design Features
The STL3NM60N incorporates STMicroelectronics' proprietary MDmesh™ technology, which significantly reduces conduction losses while maintaining excellent switching performance. Its 4V gate threshold voltage (at 250µA) ensures compatibility with standard logic drivers while maintaining precise control over switching characteristics. The device's ±25V gate-source voltage rating provides enhanced reliability in demanding environments.
This MOSFET's 188 pF input capacitance (at 50V Vds) contributes to its exceptional switching performance, making it particularly suitable for high-frequency applications. The combination of low Qg (9.5 nC) and optimized Rds(on) ensures minimal power loss during operation, which is crucial for energy-efficient designs in power supply and motor control applications.
Designed for modern electronics, the STL3NM60N meets the demand for smaller, more efficient power solutions. Its PowerFlat™ packaging technology eliminates the need for through-hole mounting while maintaining excellent thermal performance. This makes it particularly valuable in applications such as:
- Switching power supplies (SMPS)
- Motor control systems
- Industrial automation equipment
- LED lighting solutions
- Renewable energy systems
The device's 1.8Ω maximum on-resistance at 10V Vgs ensures minimal conduction losses, while its 600V rating provides ample headroom for voltage spikes in industrial environments. The combination of these characteristics makes the STL3NM60N a versatile solution for designers seeking to balance performance, efficiency, and reliability.
Thermal Performance and Packaging
The PowerFlat™ package's thermal advantages become particularly apparent in high-current applications. With a thermal resistance (Rthja) of just 62.5°C/W in typical configurations, the device maintains optimal operating temperatures even under heavy load conditions. This thermal efficiency extends component lifespan and reduces the need for additional cooling solutions in most applications.
The STL3NM60N's surface-mount design aligns with modern manufacturing requirements, enabling automated assembly processes while maintaining mechanical robustness. The 8-PowerVDFN package dimensions (3.3x3.3mm) make it an ideal choice for space-constrained designs without compromising power handling capabilities.
Tags: Power MOSFET, STM, MDmesh II, N-Channel Transistor, Industrial Electronics