STMicroelectronics STL36N55M5 N-Channel MOSFET 550V 22.5A PowerFlat™ 8x8 HV
- Brand: STMicroelectronics
- Product Code: STL36N55M5
- Availability: In Stock
$4.00
- Ex Tax: $4.00
Introducing the STMicroelectronics STL36N55M5 N-Channel MOSFET
In the realm of high-performance power electronics, STMicroelectronics continues to set benchmarks with its MDmesh™ V series, featuring the STL36N55M5 N-Channel MOSFET. This cutting-edge component combines robust electrical characteristics with advanced thermal management, making it an ideal choice for demanding applications such as industrial power supplies, motor drives, and renewable energy systems. With a rated drain-source voltage (Vdss) of 550V and a continuous drain current of 22.5A at 25°C, the STL36N55M5 delivers exceptional efficiency and reliability in compact surface-mount packaging.
Technical Excellence in Power Semiconductor Design
At the heart of this MOSFET lies STMicroelectronics' proprietary MDmesh™ V technology, which optimizes switching performance while minimizing conduction losses. The device achieves an impressive Rds(on) of just 90mΩ at 16.5A and 10V gate-source voltage (Vgs), significantly reducing power dissipation. Its gate charge (Qg) of 62nC at 10V ensures fast switching transitions, crucial for high-frequency applications. The component's ±25V gate-source voltage rating provides enhanced operational flexibility, while the 5V gate threshold voltage (Vgs(th)) enables compatibility with standard logic-level drivers.
The PowerFlat™ (8x8) HV package represents a significant thermal innovation, offering a low-profile solution that maximizes heat dissipation through its exposed pad design. This advanced packaging technology allows the device to maintain optimal operating temperatures even under full load conditions, with a power dissipation rating of 150W at case temperature (Tc). The 8-PowerVDFN footprint facilitates automated PCB assembly while maintaining mechanical durability in harsh environments.
| Parameter | Specification |
|---|---|
| Max Vdss | 550V |
| Continuous Drain Current | 22.5A @ 25°C |
| Rds(on) Max | 90mΩ @ 16.5A, 10V |
| Gate Charge | 62nC @ 10V |
| Operating Temperature | 150°C (TJ) |
Applications and Performance Advantages
Engineers designing next-generation power systems will find the STL36N55M5 particularly valuable for its ability to maintain efficiency across diverse operating conditions. Its optimized capacitance characteristics (2670pF Ciss at 100V) contribute to reduced electromagnetic interference (EMI), while the device's inherent ruggedness ensures long-term reliability in challenging thermal environments. The component excels in applications requiring high breakdown voltage tolerance and minimal conduction losses, including:
• Industrial motor drives and variable frequency drives
• Solar inverters and energy storage systems
• High-voltage DC-DC converters
• Industrial automation equipment
• Smart grid infrastructure
The STL36N55M5's compatibility with surface-mount technology (SMT) production lines enables manufacturers to achieve cost-effective, high-volume assembly while maintaining exceptional thermal performance. This device represents a perfect balance between electrical performance, thermal efficiency, and design flexibility, embodying STMicroelectronics' commitment to advancing power semiconductor technology.
Tags: Power Management, Surface Mount Device, MDmesh V Series