STMicroelectronics STFW8N120K5 MDmesh K5 Series N-Channel MOSFET 1200V 6A TO-3PF
- Brand: STMicroelectronics
- Product Code: STFW8N120K5
- Availability: In Stock
$3.80
- Ex Tax: $3.80
Revolutionizing Power Management with STMicroelectronics STFW8N120K5 MDmesh K5 MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its MDmesh™ K5 series, and the STFW8N120K5 N-Channel MOSFET stands as a testament to this innovation. Designed to meet the demands of high-voltage applications, this device combines exceptional performance, reliability, and efficiency in a robust TO-3PF package. Whether you're engineering industrial power supplies, automotive systems, or renewable energy solutions, the STFW8N120K5 offers the technical prowess to elevate your designs.
Key Technical Advantages
Operating at a staggering 1200V drain-source voltage (VDSS), this N-Channel MOSFET delivers a continuous drain current of 6A at 25°C, making it ideal for high-power scenarios where voltage withstand capability is critical. Its advanced MDmesh K5 technology reduces conduction losses through an ultra-low RDS(on) of just 2Ω at 2.5A and 10V gate-source voltage (VGS). This translates to improved energy efficiency and reduced thermal stress in demanding applications.
The device's gate charge (Qg) is optimized at 13.7nC (max) under 10V VGS, ensuring rapid switching performance while maintaining minimal losses. With a maximum gate-source voltage (VGS(max)) of ±30V and a threshold voltage (VGS(th)) of 5V at 100µA, the STFW8N120K5 balances sensitivity with robustness, enabling precise control in both low- and high-frequency operations.
| Parameter | Specification |
|---|---|
| Max Voltage | 1200 V |
| Continuous Drain Current | 6A (Tc) |
| RDS(on) | 2Ω @ 2.5A, 10V |
| Gate Charge | 13.7 nC @ 10V |
| Operating Temperature | -55°C to 150°C (TJ) |
Industrial-Grade Durability
Engineered for extreme environments, this TO-3PF packaged MOSFET features through-hole mounting capability and a thermal resistance (TC) rating that supports up to 48W power dissipation. Its rugged construction ensures reliable operation across automotive (-40°C to 150°C) and industrial temperature ranges, while the 505pF input capacitance at 100V VDS maintains stability in high-frequency switching applications. The device's ±30V gate-source voltage tolerance provides additional protection against voltage spikes, extending component lifespan in harsh electrical conditions.
The STFW8N120K5's versatility shines in applications ranging from motor drives and welding equipment to solar inverters and uninterruptible power supplies (UPS). Its compatibility with STM's ecosystem of power management solutions enables seamless integration in complex systems requiring precise voltage regulation and minimal energy waste.
This second-generation MDmesh K5 device represents STMicroelectronics' commitment to sustainable innovation, reducing system losses by up to 20% compared to previous silicon technologies. When combined with its 300-piece minimum order quantity and tube packaging configuration, it offers both engineering excellence and supply chain flexibility for volume production scenarios.
Tags: Power Electronics, Industrial Automation, Automotive Systems, High-Voltage MOSFET