STFW12N120K5 1200V 12A N-Channel MOSFET | STMicroelectronics MDmesh K5 Series
- Brand: STMicroelectronics
- Product Code: STFW12N120K5
- Availability: In Stock
$7.50
- Ex Tax: $7.50
STFW12N120K5: High-Power N-Channel MOSFET for Demanding Applications
The STFW12N120K5 is a cutting-edge N-channel power MOSFET from STMicroelectronics' renowned MDmesh™ K5 series, engineered for high-voltage industrial applications requiring exceptional efficiency and reliability. With a 1200V breakdown voltage and 12A continuous drain current capability, this device combines advanced silicon technology with robust packaging to deliver superior performance in power conversion systems.
Advanced Technical Specifications
Designed for modern power electronics, the STFW12N120K5 features a remarkably low on-state resistance of 690mΩ at 10V gate drive, minimizing conduction losses in high-frequency switching applications. Its optimized gate charge (44.2nC) enables fast switching transitions while maintaining thermal stability, making it ideal for hard-switching topologies in renewable energy systems and industrial motor drives.
Key electrical characteristics include:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 1200V |
| Continuous Drain Current (Id) | 12A @ 25°C |
| Rds(on) Max | 690mΩ @ 6A, 10V |
| Gate Charge (Qg) | 44.2nC @ 10V |
| Operating Temperature | -55°C to 150°C |
Industrial-Grade Reliability
Housed in the industry-standard TO-3PF package, this through-hole MOSFET offers excellent thermal dissipation characteristics for demanding environments. The device's ±30V gate voltage rating provides enhanced ruggedness against voltage spikes, while its 1370pF input capacitance ensures stable operation in high dv/dt conditions. With a maximum power dissipation of 63W (Tc), the STFW12N120K5 maintains performance integrity under continuous high-load scenarios.
Target Applications
This versatile power MOSFET excels in various high-voltage applications including:
• Solar inverters and energy storage systems
• Industrial motor drives and automation equipment
• High-frequency power supplies
• Uninterruptible power supply (UPS) systems
• Electric vehicle charging infrastructure
Performance Advantages
The fifth-generation MDmesh K5 technology delivers significant improvements over previous generations, including reduced switching losses (up to 20% improvement) and enhanced avalanche energy handling. Its 5V gate threshold voltage simplifies driver circuit design while maintaining compatibility with standard 10V gate drive systems. The device's inherent stability in hard-switching applications reduces electromagnetic interference (EMI), facilitating compliance with international standards.
Design Considerations
When implementing the STFW12N120K5 in power designs, engineers should consider:
• Thermal management: Ensure adequate heatsinking for continuous operation above 8A drain current
• Gate drive optimization: Use low-impedance gate drivers to exploit the device's fast switching capabilities
• PCB layout: Minimize parasitic inductance in high-current paths
• Safety margins: Maintain >20% voltage derating in critical applications
Conclusion
The STFW12N120K5 represents STMicroelectronics' commitment to advancing power semiconductor technology. Its combination of high voltage capability, low on-resistance, and rugged packaging makes it an optimal choice for next-generation industrial power systems requiring both performance and reliability. When integrated with proper thermal management and gate drive circuitry, this MOSFET delivers exceptional efficiency in demanding operating environments.
Tags: Power MOSFET, High Voltage, Industrial Applications, Energy Efficiency, Semiconductor Devices