STFU16N65M2 MDmesh™ M2 Series 650V 11A N-Channel MOSFET (TO-220FP)

STFU16N65M2 MDmesh™ M2 Series 650V 11A N-Channel MOSFET (TO-220FP)

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STFU16N65M2 MDmesh™ M2 Series: High-Performance Power Discrete for Demanding Applications

STMicroelectronics' STFU16N65M2 MDmesh™ M2 Series N-Channel MOSFET represents the pinnacle of power management technology, combining robust electrical characteristics with industrial-grade reliability. Designed for high-voltage applications requiring exceptional efficiency and thermal stability, this 650V, 11A power transistor delivers optimal performance in motor drives, power supplies, and renewable energy systems. With its advanced MDmesh™ M2 technology reducing conduction losses while maintaining superior switching performance, this device sets new standards for power density and energy efficiency.

Key Technical Advantages

At the heart of the STFU16N65M2's exceptional performance lies its groundbreaking trench-gate technology. This innovative design achieves an unprecedented balance between low on-state resistance (RDS(on)) and fast switching capabilities. The device's 360mΩ maximum on-resistance at 5.5A and 10V gate-source voltage ensures minimal power dissipation, translating to cooler operation and extended system lifespan. Its 650V drain-source breakdown voltage rating provides ample headroom for industrial applications experiencing voltage transients.

ParameterValue
Max VDSS650 V
Continuous Drain Current11 A
RDS(on) (Max)360 mΩ
Gate Charge19.5 nC
Operating Temperature-55°C to 150°C
Thermal Performance & Packaging

The TO-220FP package delivers exceptional thermal management capabilities through its optimized die attach and leadframe design. This surface-mount compatible package achieves 25W maximum power dissipation at case temperature, enabling reliable operation in harsh environments. The device's ±25V gate-source voltage rating provides enhanced robustness against gate oxide stress, while its 4V maximum threshold voltage ensures stable switching characteristics across temperature ranges.

Engineers will appreciate the STFU16N65M2's inherent immunity to thermal runaway, thanks to its positive temperature coefficient of RDS(on). This self-limiting characteristic enhances system reliability during overload conditions. The device's 718pF input capacitance at 100V operation maintains fast switching speeds while minimizing driver power requirements, making it ideal for high-frequency applications.

Industrial & Automotive Applications

This versatile power transistor excels in a wide range of applications including industrial motor drives, solar inverters, EV charging stations, and smart grid systems. Its MDmesh™ M2 technology reduces conduction losses by up to 30% compared to conventional super-junction MOSFETs, directly improving system efficiency. In automotive applications, the device meets stringent AEC-Q101 reliability standards, making it suitable for on-board chargers and 48V mild hybrid systems.

The STFU16N65M2's through-hole TO-220-3 Full Pack configuration offers mechanical stability in vibration-prone environments while maintaining excellent thermal coupling to heatsinks. Designers can leverage its 250µA gate threshold voltage stability to create precise switching circuits with minimal external compensation requirements.

Design Flexibility & Compliance

This RoHS-compliant device demonstrates STMicroelectronics' commitment to sustainable electronics manufacturing. Its lead-free packaging and halogen-free materials meet modern environmental regulations while maintaining mechanical integrity. The transistor's 950-unit inventory availability ensures design teams can transition seamlessly from prototyping to mass production without supply chain interruptions.

For designers seeking to optimize their power architectures, the STFU16N65M2 provides an ideal combination of performance, reliability, and environmental compliance. When combined with ST's comprehensive design ecosystem including SPICE models, thermal simulation tools, and application notes, this power transistor enables rapid development of efficient power systems meeting the most demanding efficiency standards.

Tags: Power Discrete Semiconductors, Industrial MOSFETs, Automotive Electronics, High-Voltage Transistors, Energy-Efficient Power Switches

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