STMicroelectronics STFU15N80K5 N-Channel MOSFET 800V 14A TO220FP
- Brand: STMicroelectronics
- Product Code: STFU15N80K5
- Availability: In Stock
$0.89
- Ex Tax: $0.89
STMicroelectronics STFU15N80K5: High-Performance N-Channel MOSFET for Demanding Applications
The STFU15N80K5 from STMicroelectronics is a cutting-edge N-Channel MOSFET designed for high-voltage and high-current applications. With its advanced MDmesh™ K5 technology, this component combines robust performance with reliability, making it ideal for power electronics in industrial and consumer devices. This 800V, 14A MOSFET delivers exceptional efficiency and thermal management, ensuring optimal operation in demanding environments.
Key Technical Specifications
Engineered for precision and durability, the STFU15N80K5 features a maximum drain-source voltage (Vdss) of 800V and a continuous drain current of 14A at 25°C. Its low on-state resistance (Rds(on)) of 375mΩ at 7A and 10V gate-source voltage ensures minimal power loss during operation. The device also boasts a gate charge (Qg) of 32nC at 10V, enabling fast switching capabilities for high-frequency applications. Housed in a TO-220FP package, this through-hole MOSFET provides excellent thermal dissipation and mechanical stability.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 800V |
| Continuous Drain Current (Id) | 14A |
| On-State Resistance (Rds(on)) | 375mΩ |
| Gate Charge (Qg) | 32nC |
Applications and Versatility
This MOSFET excels in a wide range of applications, including power supplies, motor controls, and voltage converters. Its high-voltage rating makes it suitable for AC/DC power adapters, LED lighting systems, and industrial automation equipment. The STFU15N80K5's ability to handle extreme temperatures (-55°C to 150°C operating range) ensures reliable performance in harsh environments. The TO-220-3 Full Pack case provides enhanced insulation and mounting flexibility for various PCB configurations.
Advanced Features for Enhanced Performance
STMicroelectronics' MDmesh™ K5 technology minimizes conduction losses while maintaining exceptional switching characteristics. The device's ±30V gate-source voltage tolerance offers protection against voltage spikes, while the 1100pF input capacitance (Ciss) at 100V enables stable operation in high-speed circuits. With a maximum power dissipation of 35W (Tc), this MOSFET maintains efficiency even under heavy loads. The 5V gate threshold voltage (Vgs(th)) ensures compatibility with standard logic-level drivers, simplifying circuit design and integration.
Tags: Power MOSFET, High Voltage, N-Channel, TO-220 Package, STMicroelectronics